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IRF3007L-IRF3007S
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
:raRIectifier
Typical Applications
. 42 Volts Automotive Electrical Systems
AUTOMOTIVE MOSFET
PD - 94548A
IRF3007S
lFlF3007L
HEXFET8 Power MOSFET
Features
. Ultra Low On-Resistance
. 175°C Operating Temperature
. Fast Switching
o Repetitive Avalanche Allowed up to Tjmax
VDSS = 75V
" RDSW) = 0.01269
Description
Specifically designed for Automotive applications, this design of
HEXFETO Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating. These combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D2Pak TO-262
IRF3007S IRF3007L
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 62
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 44 A
IDM Pulsed Drain Current (D 320
PD @Tc = 25°C Power Dissipation 120 W
Linear Derating Factor 0.8 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 290 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value© 946
IAR Avalanche CurrentCD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .25 °C/W
ReJA Junction-to-Ambient (PCB Mounted,steady state)" - 62
** This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-1O Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
1
09/19/02
IRF3007S/L International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)D53 Drain-to-Source Breakdown Voltage 75 - - V 1/ss = 0V, lo = 250pA
AV(BR)D$S/ATJ Breakdown Voltage Temp. Coefficient - 0.084 - V/°C Reference to 25°C, lo = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 10.5 12.6 mn Viss = 10V, ID = 48A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = 10V, ID = 250pA
gis Forward Transconductance 180 - - S Vos = 25V, ID = 48A
bss Drain-to-Source Leakage Current _ - 20 pA Vos = 75V, Vas = 0V
- - 250 Vos = 60V, VGS = 0V, To = 150°C
Isss Gate-to-Source Forward Leakage - - 200 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
09 Total Gate Charge - 89 130 ID = 48A
095 Gate-to-Source Charge - 21 32 nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 30 45 I/as = 10V
td(on) Turn-On Delay Time - 12 - VDD = 38V
tr Rise Time - 80 - ns ID = 48A
td(off) Turn-Off Delay Time - 55 - Rs = 4.69
tt Fall Time - 49 - Vss = 10V 9)
. Between lead, D
u, Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
from package G
Ls Intemal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 3270 - Vss = 0V
Coss Output Capacitance - 520 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 78 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 3500 - Vss = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 340 - Ves = 0V, VDS = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance © - 640 - VGs = 0V, Vos = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 80© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) o - - 320 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 48A, I/ss = 0V (D
trr Reverse Recovery Time - 85 130 ns Tu = 25°C, IF = 48A, VDD = 38V
Qrr Reverse Recovery Charge - 280 420 nC di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by S Cass eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11). as Coss while Vos is rising from 0 to 80% Voss .
© Starting To = 25°C, L = 0.24mH © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
Re = 25f2, IAS = 48A, VGs=10V (See Figure 12). avalanche performance.
© ISDS 48A, di/dt S 330A/ps, VDDS V(BR)DSSI C) This value determined from sample failure population. 100%
TJ f 17sec tested to this value in production.
© Pulse width s 400ps; duty cycle s: 2%.
2
