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IRF3007PBFIRN/a6000avai75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRF3007PBFVISHAYN/a10avai75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


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IRF3007PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-95618A
International
TOR Rectifier IRF3007PbF
Typical Applications
. Industrial MotorDrive HEXFET® Power MOSFET
Features D
. VDSS = 75V
Ultra Low On-Resistance
. 175°C OperatingTemperature
o Fast Switching G A RDS(on) = 0.01269
. Repetitive Avalanche Allowed up to TImax
. Lead-Free ID = 75A
Description
This design otHEXFET6 Power MOSFETs utilizes the
lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of
this HEXFET power MOSFET are a 175°C junction Ft;
operating temperature, fast switching speed and 'd. 7
improved repetitive avalanche rating. These combine 1.)_,
to make this design an extremely efficient and reliable _
device for use in a wide variety of applications.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 80
ID @ To = 100°C Continuous Drain Current, Vas © 10V (See Fig.9) 56 A
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Package limited) 75
IBM Pulsed Drain Current Ci) 320
Po @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Ves Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy© 280 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value© 946
IAR Avalanche Current0) See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 1.1 (10) N°m (lbf-in)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 0.74
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
1
07/23/10

IRF3007PbF International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V Vss = 0V, lo = 250pA
AV(sRyoss/ATo Breakdown Voltage Temp. Coefficient - 0.084 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance -- 10.5 12.6 mn Vss = 10V, ID = 48A 03
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gfs Forward Transconductance 180 - - S Vos = 25V, ID = 48A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 75V, VGS = 0V
- - 250 Vos = 60V, Vas = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 200 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
% Total Gate Charge - 89 130 ID = 48A
Qgs Gate-to-Source Charge - 21 32 nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 30 45 VGS = 10V
td(on) Turn-On Delay Time - 12 - I/oo = 38V
tr Rise Time - 80 - ns lo = 48A
td(off) Turn-Off Delay Time - 55 - Rs = 4.69
tf Fall Time - 49 - Vss = 10V C9
Lo Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) E )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 3270 - Vss = 0V
Coss Output Capacitance .-.- 520 -- pF Vros = 25V
Crss Reverse Transfer Capacitance - 78 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 3500 - Ves = 0V, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 340 - l/ss = 0V, Vos = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance S - 640 - I/ss = 0V, Vos = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) _ - 80© A showing the
ISM Pulsed Source Current _ _ 320 integral reverse G
(Body Diode) CD p-n junction diode. S
VSD Diode Forward Voltage -- -- 1.3 V Tu = 25°C, IS = 48A, l/ss = 0V (9
tr, Reverse Recovery Time - 85 130 ns Tu = 25°C, IF = 48A, VDD = 38V
Qrr Reverse Recovery Charge - 280 420 nC di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by S Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as C while V is risin from 0 to 80% V .
© Starting T J = 25°C, L = 0.24mH oss DS g DSS
Rs-- 25n, IAS-- 48A, VGs=10V (See Figure 12). © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
© ISD S 48A, di/dt S 330A/ps, VDD S V(BR)DSS! avalanche performance.
To f 175°C (D This value determined from sample failure population. 100%
Ci) Pulse width S 400ps; duty cycle S 2%. tested to this value in production.
2

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