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IRF3315SIRN/a15000avai150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


IRF3315S ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRF3315S
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD-9.1617A
|RF3315S/L
International
IEER Rectifier
PRELIMINARY
HEXFET*) Power MOSFET
0 Advanced Process Technology
o Surface Mount(lRF3315S) D
o Low-profilethrough-hole (IRF3315L) VDSS = 150V
0 175°C Operating Temperature
o Fast Switching RDS(on) = 0.0829
0 FullyAvalanche Rated G
Description s ID = 21A
Fifth Generation HEXFETS from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The of Pak
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3315L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, N/ss @ 10V© 21
ID @ To = 100°C Continuous Drain Current, VGS @ 10VS 15 A
IDM Pulsed Drain Current OS 84
PD @TA= 25°C Power Dissipation 3.8 W
PD @Tc = 25°C Power Dissipation 94 W
Linear Derating Factor 0 63 W/°C
l/ss Gate-to-Source Voltage i 20 V
EAs Single Pulse Avalanche Energy©6) 350 m]
IAR Avalanche Current© 12 A
EAR Repetitive Avalanche Energyc0 9 4 ml
dv/dt Peak Diode Recovery dv/dt a)G) 2.5 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Raoc Junction-to-Case - 1.6 0
RNA Junction-to-Ambient ( PCB Mounted/steady-state)" - 40 CAN

11/7/97
IRF3315S/L.
International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250pA
AVRDs(on) Static Drain-to-Source On-Resistance - -- 0.082 f2 VGs = 10V, ID = 12A GD
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = l/ss, ID = 250pA
gig Forward Transconductance 17 - - S I/os = 50V, ID = 12AS
bss Drain-to-Source Leakage Current - - 25 pA VDS = 150V, VGS = 0V
- - 250 VDS = 120V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
q, Total Gate Charge - - 95 ID = 12A
093 Gate-to-Source Charge - - 11 nC I/os = 120V
di Gate-to-Drain ("Miller") Charge - - 47 VGs = 10V, See Fig. 6 and 13 C9S
td(on) Turn-On Delay Time - 9.6 - VDD = 75V
tr Rise Time - 32 - ns ID = 12A
tum) Turn-Off Delay Time - 49 - Rs = 5.19
tr FallTime - 38 - RD = 5.952, See Fig. 10 (96)
Ls Internal Source Inductance - 7_5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 1300 - VGs = 0V
Coss Output Capacitance - 300 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 21 MOSFETsymbol D
(Body Diode) A showing the L-u-r
ISM Pulsed Source Current - - 84 integral reverse G E
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 43A, l/ss = 0V ©
trr Reverse Recovery Time - 174 260 ns TJ = 25°C, IF = 43A
Qrr Reverse Recovery Charge - 1.2 1.7 pC di/dt = 100A/ps C4)6)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
GD Pulse width 3 300ps; duty cycle S 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 4.9 mH
RG = 259, IAS-- 12A. (See Figure 12)
© ISD S 12A, di/dt S 140/Ups, VDD f V(BR)DSSI
T J f 175°C
** When mounted on 1" square PCB ( FR-4 or G-1O Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
S Uses M3315 data and test conditions

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