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IRF3515LIORN/a86avai150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF3515SIRN/a7580avai150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


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IS61NLP25672-200B1I , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NLP51236-200B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NLP51236-200TQI , 256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
IS61NP25636-133TQ , 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NSCS25672-250B , RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM
IS61NVF102418-7.5B3 , 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM


IRF3515L-IRF3515S
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD- 91899B
International
. . IRF3515S
HEXFET© Power MOSFET
Applications
. Switch Mode Power Supply (SMPS) Voss RDS(on) max ID
0 Uninterruptible Power Supply 150V 0.0459 41A
0 High speed power switching
Benefits
0 Low Gate Charge 09 results in Simple
Drive Requirement .:gijiih iii)
0 Improved Gate, Avalanche and dynamic 'ijr'tri
dv/dt Ruggedness l
o Fully Characterized Capacitance and
Avalanche Voltage and Current D2Pak TO-262
0 Effective Coss Specified (See AN 1001) IRF3515S IRF3515L
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 41
ID @ TC = 100°C Continuous Drain Current, l/ss @ 10V 29 A
IDM Pulsed Drain Current co 164
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 Wl°C
V63 Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 4.3 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Applicable Off Line SMPS Topologies
o Telcom 48V input DC/DC Active Clamp Reset Forward Converter
Notes co through S are on page 10
1
10/28/99

IRF3515S/L
International
TOR Rectifier
Static til T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V I/cs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.21 - Vl°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 0.045 n VGS = 10V, ID = 25A ©
VGS(th) Gate Threshold Voltage 3.0 - 4.5 V VDs = VGs, ID = 250pA
loss Drain-to-Source Leakage Current _- _- Ji, pA VS: =" 128$ V2: =" i,')), TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic © To = 25°C (unless otherwise s pecified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 15 - - S Vos = 50V, ID = 25A
09 Total Gate Charge - - 107 ID = 25A
095 Gate-to-Source Charge - - 23 no Vos = 120V
di Gate-to-Drain ("Miller") Charge - - 65 VGS = 10V, See Fig. 6 and 13 co
tam) Turn-On Delay Time - 17 - VDD = 75V
tr Rise Time - 120 - ns ID = 25A
td(oit) Turn-Off Delay Time - 34 - RG = 2.59
If Fall Time - 63 - Ro = 3.0n,See Fig. 10 (D
Ciss Input Capacitance - 2260 - VGs = 0V
Cass Output Capacitance - 530 - Vros = 25V
Crss Reverse Transfer Capacitance - 170 - pF I = 1.0MHz, See Fig. 5
Cass Output Capacitance - 3330 - VGS = 0V, VDs = 1.0V, f = 1.0MHz
Cogs Output Capacitance - 230 - VGS = 0V, Vos = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 280 - VGS = 0V, Vos = 0V to 120V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 670 ml
IAR Avalanche CurrentC0 - 25 A
EAR Repetitive Avalanche Energy© - 20 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rox: Junction-to-Case - 0.75 °C/W
RQJA Junction-to-Ambient ( PCB Mounted, steady-state)' - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 41 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 164 p-n junction diode. s
VSD Diode Fon/vard Voltage - - 1.3 V Tu = 25°C, Is = 25A, VGS = 0V GD
trr Reverse Recovery Time - 200 300 ns TJ = 25°C, IF = 25A
Qrr Reverse RecoveryCharge - 1.6 2.4 pC di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2

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