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IRF3710ZPBF-IRF3710ZSPBF
AUTOMOTIVE MOSFET
PD - 95466
International
Tart, Rectifier AUTOMOTIVE MOSFET llRF3710ZPbF
IRF3710ZSPbF
Features I RF371 OZLPbF
Advanced Process Technology HEXFET6 Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating D
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to ijax . RDS(on) = 18mQ
Lead-Free G
Description ID = 59A
Specifically designed forAutomotive applications, s
this HEXFETQ Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea- ,,
tures ofthisdesign area175°Cjunction operating tr r; 14,iii), iii
temperature, fast switching speed and improved \5,‘ ', r” 'h _
's.,, "''ssli-'iitj-', l
repetitive avalanche rating .These features com- N, .' l, ,
bine to make this design an extremely efficient
VDSS = 100V
eind reliable d.eyice fgr use In Automotive tyoplica- TO-220AB D2Pak TO-262
tions and a wide variety of other applications. IRF371OZ IRF371OZS IRF371OZL
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 59 A
ID © Tc = 100°C Continuous Drain Current, Ves © 10V (See Fig. 9) 42
IBM Pulsed Drain Current CD 240
PD @Tc = 25°C Maximum Power Dissipation 160 W
Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 170 mJ
Eas (tested) Single Pulse Avalanche Energy Tested Value C) 200
IAR Avalanche Current CD See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © mJ
TJ Operating Junction and -55 to + 175 I
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibfoin (1 .1N°m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - O.92 °C/W
Recs Case-to-Sink, Flat, Greased Surface 0.50 _
RNA Junction-to-Ambient - 62
ROJA Junction-to-Ambient (PCB Mount, steady state)© - 40
HEXFET® is a registered trademark of International Rectifier.
1
6/30/04
IRF3710Z/S/LPbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(smoss Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 14 18 mn Vss = 10V, ID = 35A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = Vss, ID = 250pA
gfs Forward Transconductance 35 - - S VDS = 50V, ID = 35A
loss Drain-to-Source Leakage Current - - 20 PA N/os = 100V, Vss = 0V
- - 250 Vos =100V,Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
09 Total Gate Charge - 82 120 nC b = 35A
Qgs Gate-to-Source Charge - 19 28 Vos = 80V
di Gate-to-Drain ("Miller") Charge - 27 40 Vss = 10V ©
tdmn) Turn-On Delay Time - 17 - ns VDD = 50V
t, Rise Time - 77 - ID = 35A
tdmff) Turn-Off Delay Time - 41 - Rs = 6.89
t, Fall Time - 56 - Vss = 10V ©
Lo Internal Drain Inductance - 4.5 - nH Between lead,
6mm (0.25in.)
Ls Internal Source Inductance -- 7.5 - from package
and center of die contact
Ciss Input Capacitance - 2900 -- pF Vss = 0V
Coss Output Capacitance - 290 - Vos = 25V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1130 - Vss = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 170 - Vss = 0V, VDS = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 280 - Vss = 0V, Vos = 0V to 80V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 59 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 240 integral reverse a
(Body Diode) C) p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 35A, VGS = OV ©
in Reverse Recovery Time - 50 75 ns To = 25°C, IF = 35A, VDD = 25V
Q,, Reverse Recovery Charge -- 100 160 no di/dt = 100A/ps ©
u Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Limited by TJmax, starting Tu = 25°C, L = 0.27mH,
Rs = 259, IAS = 35A, VGS =1OV. Part not
recommended for use above this value.
© ISD I 35A, di/dt S 380A/ps, VDD S V(BR)DSSI
TJ 5 175°C.
© Pulse width S 1.0ms; duty cycle 3 2%.
S Cass eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss .
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
(D This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-1O Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
