IRF3711STRRPBF ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 94948IRF3711PbFSMPS MOSFETIRF3711SPbFIRF3711LPbF
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IRF3711STRLPBF-IRF3711STRRPBF
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD- 94948
International lRF3711PbF
TOR Rectifier SMPS MOSFET lRF3711SPbF
IRF3711LPbF
A li ti
o '''llrpr'enqsuencylsolated DC-DC HEXFET© Power MOSFET
Converters with Synchronous Rectification
for Telecom and Industrial Use
q High Frequency Buck Converters for
Server Processor Power Synchronous FET
0 Optimized for Synchronous Buck
Converters Including Capacitive Induced p,
Turn-on Immunity "iiiifii) xt';, 4iit
o Lead-Free 'it)), ''iiii, _
Voss R133(on) max ID
20V 6.0mQ 110A6
Benefits
. Ultra-LowGate Impedance TO-220AB D2Pak TO-262
. Very Low RDS(on) at 4.5V l/ss IRF3711PbF IRF3711SPbF IRF3711LPbF
0 Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 20 V
VGS Gate-to-Source Voltage 1 20 V
In @ To = 25°C Continuous Drain Current, Vai; © 10V 110©
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V 69 A
IDM Pulsed Drain CurrentCD 440
PD @Tc = 25°C Maximum Power Dissipation 120 W
Po @TA = 25°C Maximum Power DissipationS 3.1 W
Linear Derating Factor 0.96 W/°C
T J , Tsms Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
Rout: Junction-to-Case - 1 .04
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
ReJA Junction-to-Ambient@ - 62
ReJA Junction-to-Ambient (PCB mount)© - 40
Notes (D through © are on page 11
1
2/27/04
IRF3711/S/LPbF
International
TOR Rectifier
Static © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmpss Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, ID = 250pA
AWBmDss/ATJ Breakdown Voltage Temp. Coefficient - 0.022 - V/°C Reference to 25°C, lo = 1mA
. . . - 4.7 6.0 Vss =10v, ID = 15A C3)
- - - mn
RDSmn) Static Drain to Source On Resistance 6.2 8.5 Vss = 4.5V, ID = 12A ©
Vegan) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 PA Vos = 16V, Vas = 0V
- - 100 Vos = 16V, Wss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A Vss = 16V
Gate-to-Source Reverse Leakage - - -200 Vss = -16V
Dynamic © Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 53 - - S Vos = 16V, ID = 30A
% Total Gate Charge - 29 44 lo = 15A
093 Gate-to-Source Charge - 7.3 - nC Vos = 10V
qu Gate-to-Drain ("Miller") Charge - 8.9 - l/ss = 4.5V
Qoss Output Gate Charge - 33 - Vas = 0V, VDs = 10V
tdmn) Turn-On Delay Time - 12 - VDD = 10V
tr Rise Time - 220 - ns ID = 30A
tsom Turn-Off Delay Time - 17 - Rs = 1.89
tf Fall Time - 12 - Vss = 4.5V ©
Ciss Input Capacitance - 2980 - VGs = 0V
Coss Output Capacitance - 1770 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 280 - f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 460 mJ
IAR Avalanche Current0) - 30 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 11062 MOSFET symbol D
(Body Diode) - - A showing the
ISM Pulsed Source Current 440 integral reverse (3
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - 0.88 1.3 V Tu = 25°C, ls = MA, Vas = 0V ©
- 0.82 - Tu = 125°C, Is = 30A, Ves = 0V ©
trr Reverse Recovery Time - 50 75 ns Tu = 25°C, IF = 16A, VR=10V
ar, Reverse Recovery Charge - 61 92 no di/dt = 100A/us ©
trr Reverse Recovery Time - 48 72 ns Tu = 125°C, IF = 16A, VR=10V
Qrr Reverse Recovery Charge - 65 98 no di/dt = 1OOA/ps ©
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