IRF3711ZCS ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Proces ..
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IRF3711ZS ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package IRF3711ZIRF3711ZSIRF3711ZL
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IRF3805LPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-262 packageFeatures®
IRF3711ZCS
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Applications
q High Frequency Synchronous Buck
Converters for Computer Processor Power
Benefits
0 Low RDS(on) at 4.5V VGS
o Ultra-Low Gate Impedance
q Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
PD - 94792
|RF3711ZCS
|RF3711ZCL
HEXFET® Power MOSFET
Voss RDS(on) max Q9
20V 6.0mQ 16nC
D2Pak TO-262
IRF3711ZCS |RF3711ZCL
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGs Gate-to-Source Voltage i 20
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 92 © A
ID @ To = 100°C Continuous Drain Current, Vss @ 10V 65 s
IDM Pulsed Drain Current C) 380
Po @Tc = 25°C Maximum Power Dissipation 79 W
PD @Tc = 100°C Maximum Power Dissipation 40
Linear Derating Factor 0.53 W/°C
To Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
RoJc Junction-to-Case - 1.89 ''C/W
ROJA Junction-to-Ambient (PCB Mount) © - 40
Notes OD through s are on page 11
1
10/07/03
|RF3711ZC/S/L International
TOR ilectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250PA
ABI/oss/AT: Breakdown Voltage Temp. Coefficient - 0.013 - VI°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.8 6.0 mn Vss = 10V, ID = 15A ©
- 5.9 7.3 VGS = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.55 2.0 2.45 v Vos = VGS, ID = 250pA
AVGS(lh)/ATJ Gate Threshold Voltage Coemcient - -5.6 - mW'C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, VGS = 0V
- - 150 Vos = 16V, vGs = 0v, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 46 - - S Vos = 10V, ID = 12A
Qg Total Gate Charge - 16 24
Qgs1 Pre-Vth Gate-to-Source Charge - 4.6 - Vos = 10V
0952 Post-l/th Gate-to-Source Charge - 1.4 - nC VGS = 4.5V
di Gate-to-Drain Charge - 5.3 - ID = 12A
ngdr Gate Charge Overdrive - 4.7 - See Fig. 16
st Switch Charge (0952 + di) _ 6.7 -
005. Output Charge - 9.5 - nC Vos = 10v, l/GS = OV
td(on) Turn-On Delay Time - 12 - VDD = 10V, VGS = 4.5V ©
t, Rise Time - 16 - ID = 12A
tdom Turn-Off Delay Time - 15 - ns Clamped Inductive Load
t, Fall Time - 5.4 -
Ciss Input Capacitance - 2150 - VGS = 0V
Coss Output Capacitance - 680 - pF I/os = 10V
Crss Reverse Transfer Capacitance - 320 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ng e se a 130
IAR 12
EAR 7.9
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 92 © MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 380 integral reverse G
(Body Diode) co p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V T: = 25°C, ls = 12A, VGs = 0V ©
tn Reverse Recovery Time - 16 24 ns T: = 25°C, IF = 12A, Vor, = 10V
er Reverse Recovery Charge - 6.0 9.0 nC di/d1= 100Alps ©
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