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IRF4104PBF
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 95468A
International
" ... IRF4104PbF
TOR Rectifier IF1F4104SPbF
I R F41 O4LPb F
Features
o Advanced Process Technology HEXFET® Power MOSFET
q Ultra Low On-Resistance D
q 175°C Operating Temperature -
q Fast Switching Vross - 40V
q Repetitive Avalanche Allowed up to Tjmax
o Lead-Free ' " RDS(on) = 5.5mQ
Description
This HEXFET® Power MOSFET utilizesthelatest s ID = 75A
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating Ps
temperature, fast switching speed and improved t, 'gait: tgi) 4si,is)t
repetitiveavalancherating.Thesefeaturescombine "tii(ii' Vf h V .
N, \J‘f‘g
to make this design an extremely efficient and \ .‘ _ l, l,
reliable device for use in a wide variety of
applications. TO-22OAB D2Pak TO-262
IRF4104PbF IRF4104SPbF IRF4104LPbF
Absolute Maximum Ratings
Parameter Max. Units
ID © TC = 25°C Continuous Drain Current, l/ss © 10V (Silicon Limited) 120
ID © TC = 100°C Continuous Drain Current, l/ss © 10V 84 A
ID @ Tc = 25°C Continuous Drain Current, l/ss © 10V (Package limited 75
IDM Pulsed Drain Current 0) 470
PD @T0 = 25°C Power Dissipation 140 W
Linear Derating Factor 0.95 W/°C
Vss Gate-to-Source Voltage 1 20 V
EAS(Thermallylimi1ed) Single Pulse Avalanche Energy© 120 mJ
E AS (Tested ) Single Pulse Avalanche Energy Tested Value © 220
IAR Avalanche Current CD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw co 10 lbf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case -- 1 .05 °C/W
Recs Case-to-Sink, Flat Greased Surface co 0.50 -
ReJA Junction-to-Ambient co - 62
RNA Junction-to-Ambient (PCB Mount) - 4O
1
07/23/10
IRF4104S/LPbF
International
TOR Rectifier
Electrical Characteristics @ T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.032 - VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.3 5.5 mn Vas = 10V, b = 75A ©
Vasom Gate Threshold Voltage 2.0 - 4.0 V l/rss = Vss, ID = 250pA
gfs Forward Transconductance 63 -- -- V Vos = 10V, ID = 75A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 40V, l/ss = 0V
- - 250 Vos = 40v, Vas = OV, TJ = 125''C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
q, Total Gate Charge -- 68 100 ID = 75A
As Gate-to-Source Charge - 21 - nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 27 - Vas = 10V ©
tum) Turn-On Delay Time - 16 - VDD = 20V
t, Rise Time - 130 - ID = 75A
td(off) Turn-Off Delay Time -- 38 -- ns Rs = 6.8 Q
t, Fall Time - 77 - Ves = 10V OD
Lo Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 3000 - Vss = 0V
Coss Output Capacitance - 660 - Vos = 25V
Crss Reverse Transfer Capacitance - 380 - pF f = 1.0MHz
Coss Output Capacitance -- 2160 -- Vss = OV, vDs = 1.0V, f = 1.0MHz
Coss Output Capacitance -- 560 -- Ves = 0V, Vos = 32V, f = 1.0MHz
C055 eff. Effective Output Capacitance - 850 - Ves = 0V, Vos = 0V to 32V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 75 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 470 integral reverse G E
(Body Diode) (D p-n junction diode. a
VSD Diode Forward Voltage -- - 1.3 V TJ = 25°C, Is = 75A, VGS = 0V ©
trr Reverse Recovery Time - 23 35 ns TJ = 25°C, IF = 75A, VDD = 20V
Qrr Reverse Recovery Charge - 6.8 10 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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