IRF510S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF510SPBF , HEXFET Power MOSFET
IRF511 ,N-Channel Power MOSFETs/ 5.5 A/ 60-100VElectrical Characteristics (Tc---- 25°C unless otherwise noted)
Symbol Characteristic f Min Max ..
IRF511 ,N-Channel Power MOSFETs/ 5.5 A/ 60-100VElectrical Characteristics (Tc---- 25°C unless otherwise noted)
Symbol Characteristic f Min Max ..
IRF512 ,N-Channel Power MOSFETs/ 5.5 A/ 60-100Vapplications,
such as switching power supplies, converters, AC and DC
motor controls, relay and s ..
IRF512 ,N-Channel Power MOSFETs/ 5.5 A/ 60-100VElectrical Characteristics (Tc---- 25°C unless otherwise noted)
Symbol Characteristic f Min Max ..
IS62C1024AL-35TI , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-35Q , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-35QI , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-35T , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-70Q , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-70Q , 128K x 8 LOW POWER CMOS STATIC RAM
IRF510S
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
n/letrstat'i.tityg
Tthit Rectifier
HEXFETO Power MOSFET
It Surface Mount
It Available in Tape & Reel
o Dynamic dv/dt Rating _
o Repetitive Avalanche Rated
0 175°C Operating Temperature
o Fast Switching
0 Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.895
IRF510S
on-resistance and cost-effectiveness.
The SMD-22O is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package, The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-22O
Absolute Maximum Ratings
Parameter Max. Units
lo @ Tc = 25°C Continuous Drain Current, Vas @ 10 V 5.6
lo @ Tc = 100°C Continuous Drain Current, Vss © 10 V 4.0 A
IDM Pulsed Drain Current Ci) 20
Po © To = 25°C Power Dissipation 43 W
Po @ TA: 25°C Power Dissipation (PCB Mount)" 3.7 _l
Linear Derating Factor 0.29 W PC
Linear Derating Factor (PCB Mount)" 0.025
Veg Gate-to-Source Voltage ce.20 V
EAS Single Pulse Avalanche Energy © 100 m1
IAR Avalanche Current C) 5.6 A
EAR Repetitive Avalanche Energy (i) 4.3 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
To, TSTG Junction and Storage Temperature Range -55 to +175 =
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Redo Junction-to-Case - - 3.5
R(JJA Junction-to-Ambient (PCB mount)" - - 40 °C/W
RwA Junction-to-Ambient - - 62
" When mounted on I" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF510S
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Theait
Parameter Min. Typ. Max. Units Test Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 100 - - V l/ss-HN, Io: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, b= 1mA
Roam) Static Drain-to~Source On-Resistance - - 0.54 Q Ves=1OV, lo=3.4A ©
VGS(lh) Gate Threshold Voltage 2.0 --. 4.0 V VDs=VGs, ID: 250pA
gis Forward Transconductance 1.3 - - S Vos=50V, ID=3.4A CO
loss Drain-to-Source Leakage Current - - 25 WA Vos=100V, Var-UN
- - 250 Vns=80V, Vas=OV, TJ=150°C
lass Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 Vss=-20V
th Total Gate Charge - - 8.3 |D=5.6A
Qgs Gate-to-Source Charge - - 2.3 no Vns=80V
di Gate-to-Drain (''Miller'') Charge - - 3.8 Vss=10V See Fig. 6 and 13 ©
tam Turn-On Delay Time - 6.9 - Voo=50V
tr Rise Time - 16 - ns |D=5.6A
tam") Turn-Off Delay Time - 15 -. Rs=24n
t, Fall Time - 9.4 - Ro=8.4Q See Figure 10 G)
Lo Internal Drain Inductance - 4.5 - trit,vrll.ltilnd.') D
nH from package (3Q:
Ls Internal Source Inductance - 7.5 - Ind center Of Si
die contact 3
Ciss Input Capacitance - 180 - Vss=OV
Coss Output Capacitance - 81 - pF Vos=25V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Test Conditions
ls Continuous Source Current - - 5 6 MOSFET symbdl D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 20 integral reverse G
(Body Diode) (i) p-n junction diode. s
Van Diode Forward Voltage - - 2.5 V TJ=25°C, ls=5.6A, VGs=OV ©
tn Reverse Recovery Time - 100 200 ns TJ=25°C, lp=5.6A
er Reverse Recovery Charge - 0.44 0.88 wc di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
(2) VDD=25V, starting TJ=25°C, L=4.8mH
RG=25§2, |As=5.6A (See Figure 12)
© Isoss.6A, di/dts75A/us, VDDs.V(srnross,
TJS175°C
© Pulse width s: 300 ps; duty cycle 32%.
