IRF520FI ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitIRF520 IRF520FIV Drain-source Voltage (V =0) 100 ..
IRF520N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRF520NL ,HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7Aapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF520NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRF520NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF520NSTRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational
TOR RectifierKavanced Process Technology
Surface Mount (IRF520NS)
Low-profile thro ..
IS62C1024L-35Q , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-35QI , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-35T , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-70Q , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-70Q , 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-70Q , 128K x 8 LOW POWER CMOS STATIC RAM
IRF520FI
N
IRF520
IRF520FI- CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS TYPICAL RDS(on)= 0.23Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC& DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM2
TO-220 ISOWATT220
TYPE VDSS RDS(on) IDIRF520
IRF520FI
100V
100V
<0.27Ω
<0.27ΩA
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRF520 IRF520FIVDS Drain-source Voltage (VGS =0) 100 V
VDGR Drain- gate Voltage (RGS =20 kΩ)100 V
VGS Gate-source Voltage ±20 V Drain Current (cont.)atTc =25o C10 7 A Drain Current (cont.)atTc =100o C7 5 A
IDM(•) Drain Current (pulsed) 40 40 A
Ptot Total DissipationatTc =25o C70 35 W
Derating Factor 0.47 0.23 W/oC
VISO Insulation Withstand Voltage (DC) 2000 V
Tstg Storage Temperature -65to 175 oC2
THERMAL DATA
TO-220 ISOWATT220Rthj-case Thermal Resistance Junction-case Max 2.14 4.29 o C/W
Rthj-amb
Rthc-s
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
300 C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value UnitIAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max, δ <1%) A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =25V) mJ
EAR Repetitive Avalanche Energy
(pulse width limitedbyTj max, δ <1%)
9mJ
IAR Avalanche Current, Repetitiveor Not-Repetitive
(Tc= 100oC, pulse width limitedbyTj max, δ <1%)
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. UnitV(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS=0 100 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS= Max Ratingx 0.8 Tc =125oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 20V ± 100 nA (∗)
Symbol Parameter Test Conditions Min. Typ. Max. UnitVGS(th) Gate Threshold Voltage VDS =VGS ID =250 μA2 2.9 4 V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID =5A 0.23 0.27 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max VGS =10V 10 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unitgfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =5A 2.7 4.5 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS= 25Vf= 1MHz VGS =0 330
IRF520/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unittd(on)
td(off)
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =50V ID =5A
RGS =4.7 Ω VGS =10V
(see test circuit)
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge =10A VGS =10V
VDD= Max Ratingx 0.8
(see test circuit) nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. UnitISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(∗) Forward On Voltage ISD =10A VGS =0 1.6 V
trr
Qrr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD =10A di/dt= 100 A/μs
VDD =20V Tj =150oC
(∗) Pulsed: Pulse duration=300μs, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
Safe Operating Area for TO-220 Safe Operating Areafor ISOWATT220
IRF520/FI
Thermal Impedancefor TO-220
Derating Curvefor TO-220
Output Characteristics
Thermal Impedancefor ISOWATT220
Derating Curvefor ISOWATT220
Transfer Characteristics
IRF520/FI
Transconductance Static Drain-source On Resistance
Maximum Drain Currentvs Temperature Gate Chargevs Gate-source Voltage
Normalized Breakdown Voltagevs TemperatureCapacitance Variations
IRF520/FI
Normalized On Resistancevs Temperature Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms
Switching Time Test Circuit Gate Charge Test Circuit
IRF520/FI
