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Absolute Maximum Ratings
Param eter Max. Units
ID tp To = 25''C Conti ..
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IRF520NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 94818
lRF520NPbF
HEXFET® Power MOSFET
International
Tait Rectifier
Advanced Process Technology
Dynamic dv/dt Rating D
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated ' A
Lead-Free G
Description
Fifth Generation HEXFETs from International Rectifier S
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
VDSS = 100V
RDS(0n) = 0.209
ID = 9.7A
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 9.7
ID © Tc = 100°C Continuous Drain Current, Vss © 10V 6.8 A
IDM Pulsed Drain Current (D 38
PD @TC = 25''C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
Ves Gate-to-Source Voltage 1 20 V
EAS Single Pulse Avalanche Energy© 91 mJ
IAR Avalanche Current© 5.7 A
EAR Repetitive Avalanche Energy© 4.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew IO lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RBJC Junction-to-Case - 3.1
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RQJA Junction-to-Ambient - 62
1 1/5/03
IRF520NPbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmpss Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, lo = 1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.20 Q Vias = 10V, ID = 5.7A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDS = Vss, ID = 250pA
gfs Forward Transconductance 2.7 - - S VDS = 50V, ID = 5.7A
loss Drain-to-Source Leakage Current - - 25 pA Vos = 100V, Vas = 0V
- - 250 Vos = 80V, Vas = 0V, T, = 150°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vias = -20V
09 Total Gate Charge - - 25 ID = 5.7A
%s Gate-to-Source Charge - - 4.8 nC VDS = 80V
di Gate-to-Drain ("Miller") Charge - - 11 Vas = 10V, See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 4.5 - VDD = 50V
t, Rise Time - 23 - ns ID = 5.7A
td(off) Turn-Off Delay Time - 32 - Rs = 229
if Fall Time - 23 - RD = 8.69, See Fig. 10 CO
u, Internal Drain Inductance - 4.5 - Between tad: D
M 6mm (0.25in.) JC )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 330 - Vss = 0V
Coss Output Capacitance - 92 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 54 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 9.7 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse 5
(Body Diode) (D - _ 38 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, IS = 5.7A, VGS = 0V (D
trr Reverse Recovery Time - 99 150 ns Tu = 25°C, IF = 5.7A
Qrr Reverse RecoveryCharge - 390 580 no di/dt = 100A/ps (0
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 4.7mH
Re = 259, IAS = 5.7A. (See Figure 12)
TJs175°C
© ' S 5.7A, di/dt S 240A/ys, VDDS V(BR)DSSV
© Pulse width S 300ps; duty cycle S 2%.
