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IRF520STRRIRN/a10000avai100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


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IRF520STRR
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
TOR Rectifier
HEXFETO Power MOSFET
o Surface Mount
0 Available in Tape & Reel
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
o 175°C Operating Temperature
o Fast Switching
0 Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low .
PD-9.896
IRFSZOS
VDSS = 100V
RDS(on) = 0.279
ID 'IU" 9.2A
on-resistance and cost-effectiveness.
The SMD-22O is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25°C Continuous Drain Current, Vas @ 10 V 9.2
In © To = 100°C Continuous Drain Current, Vas @ 10 V 6.5 A
IDM Pulsed Drain Current (i) 37
Po © To = 25°C Power Dissipation 60 W
PD @ TA = 25°C Power Dissipation (PCB Mount)" 3.7
Linear Derating Factor 0.40 W PC
Linear Derating Factor (PCB Mount)" 0.025
A/as Gate-to-Source Voltage 1-20 V
EAS Single Pulse Avalanche Energy © 200 mJ
IAn Avalanche Current (D 9.2 A
EAR _ Repetitive Avalanche Energy Ci) 6.0 mJ
dv/dt Peak Diode Recovery dv/dt G) 5.5 V/ns
To, Tsms Junction and Storage"Temperature Range -55 to +175 o C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
ch Junction-to-Case - - 2.5
Ram Junction-to-Ambient (PCB mount)" - - 40 °CNV
Rios Junction-to-Ambient - - 62
** When mounted on I" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
lRF520S
Electrical Characteristics @ Tg .= 25°C (unless otherwise specified)
DIJliR
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - we-.. V VGs=0V, ID: 250pA
AV(an)oss/ATJ Breakdown Voltage Temp. Coefficient ._..-r. 0.13 -- V/°C Reference to 25°C, b-.. 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.27 n VGs=10V, ID=5.5A (aC)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 25thiA
gfs Forward Transconductance 2.7 - -.. S VDs=50V, ID=5.5A ©
, - - 25 Vos=100V, VGs=0V
loss Drain-to-Source Leakage Current _ - 250 pA VDs=80V, Vas=0V, TJ=150°C
less Gate-to-Source Forward Leakage -.'. - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
ch, Total Gate Charge - - 16 Iry=9.2A
Qgs Gate-to-Source Charge - - 4.4 nC VDs=80V
di Gatecto-Drain ("Miller") Charge - - 7.7 Ves=10V See Fig. 6 and 13 ©
tam) Tum-On Delay Time ...- 8.8 - VDD=50V
tr Rise Time - 30 - ns. ID=9.2A
Idiom Tum-Off Delay Time - 19 -- Fle=18§2
tf Fall Time - 2O - RD=5.2Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - t $1» tie. ') [Egg
_ nH from package G
Ls Internal Source Inductance - 7.5 - and center 6f
die contact s
Ciss Input Capacitance - 360 - VGs=0V
Coss Output Capacitance - 150 - pF V03: 25V
Crss Reverse Transfer Capacitance - 34 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 9 2 MOSFET symbol D
(Body Diode) ' A showing the (ri-ji)
ISM Pulsed Source Current - - 37 integral reverse G :L
(Body Diode) (i) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=2500, Is=9.2A, VGs=0V ©
tn Reverse Recovery Time - 110 260 ns TJ=250C, IF=9.2A
Orr Reverse Recovery Charge - 0.53 1.3 wc di/dt---100A/ps C4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(i) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C. L=3.5mH
Rs=25n, lAs=9.2A (See Figure 12)
TJS175°C
I © ISDSQ.2A, di/dts:110A/ws, VDDSV(BR)Dss,
© Pulse width s; 300 us; duty cycle 32%.
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