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IRF5210
-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International
:rartiiuctifier
PD - 91434A
IRF5210
HEXFET© Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Description
D VDSS = -100V
o RDS(on) = 0.069
ID = -40A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
Ievelsto approximately 50 watts. The lowthermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ -10V -40
ID @ Tc = 100°C Continuous Drain Current, Vss @ -10V -29 A
IDM Pulsed Drain Current CD -140
Po @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 Wl°C
I/ss Gate-to-Source Voltage , 20 V
Em Single Pulse Avalanche Energy© 780 ml
IAR Avalanche Current© -21 A
EAR Repetitive Avalanche Energy0) 20 m]
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 16mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "CM/
RQJA Junction-to-Ambient - 62
5/13/98
|RF5210
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefhcient - -0.11 - V/°C Reference to 25°C, ID = -1mA
Rosion) Static Drain-to-Source On-Resistance - - 0.06 Q VGS = -10V, ID = -24A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V I/os = VGS, ID = -250pA
git Forward Transconductance 10 - - S Vos = -50V, ID = -21A
loss Drain-to-Source Leakage Current - - -25 pA Vros = -100V, VGS = 0V
- - -250 Vros = -80V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
09 Total Gate Charge - - 180 ID = -21A
Qgs Gate-to-Source Charge - - 25 n0 VDS = -80V
di Gate-to-Drain ("Miller") Charge - - 97 N/ss = -10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 17 - VDD = -50V
tr Rise Time - 86 - ID = -21A
tum Turn-Off Delay Time - 79 - ns Rs = 2.59
tr FaIITime - 81 - Ro = 2.49, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between léad, f D
nH 6mm (0.25in.) GALE
from package
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 2700 - VGs = 0V
Coss Output Capacitance - 790 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 450 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ -40 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - -140 integral reverse G
(Body Diode) (I) p-n junction diode. 3
l/so Diode Forward Voltage - - -1.6 V TJ = 25°C, Is = -21A, l/ss = 0V G)
trr Reverse Recovery Time - 170 260 ns TJ = 25°C, IF = -21A
Qrr Reverse RecoveryCharge - 1.2 1.8 no di/dt = -100A/ps ©
ton Fon/vard Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by Ls+LD)
N otes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See ftg. 11 )
Re: 259, IAS-- -21A. (See Figure 12)
T J s: 175°C
© Voc, = -25V, starting Tu = 25°C, L = 3.5mH © Pulse width S 300ps; duty cycle S 2%.
© ISD 5 -21A, di/dt S -480A/ps, VDD f V(BR)DSS:
