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IRF5305IRN/a11000avai-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
IRF5305PBFIRN/a12000avai-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package


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IRF5305-IRF5305PBF
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
International
:raRRectifier
PD - 91385B
IRF5305
HEXFET© Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Description
D I/ross = -55V
o RDS(on) = 0.069
ID = -31A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
Ievelsto approximately 50 watts. The lowthermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ -10V -31
ID @ Tc = 100°C Continuous Drain Current, Vss @ -10V -22 A
IDM Pulsed Drain Current (O -110
Po @Tc = 25''C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 280 mJ
IAR Avalanche CurrentC) -16 A
EAR Repetitive Avalanche Energy© 11 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1 Nom)
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 1 .4
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
3/3/00
IRF5305
International
IEBR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - -0.034 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 0.06 Q VGS = -10V, ID = -16A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vos = VGS, ID = -250pA
gts Forward Transconductance 8.0 - - S Vos = -25V, lo = -16A
loss Drain-to-Source Leakage Current - - -25 pA Vros = -55V, VGS = 0V
- - -250 Vros = -44V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
% Total Gate Charge - - 63 ID = -16A
Qgs Gate-to-Source Charge - - 13 nC v.33 = -44V
di Gate-to-Drain ("Miller") Charge - - 29 V93 = -10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 14 - VDD = -28V
tr Rise Time - 66 - ID = -16A
tum Turn-Off Delay Time - 39 - ns Rs = 6.89
tf Fall Time - 63 - Ro = 1.69, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between le"': f D
nH 6mm (0.25m.) GALE
from package
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1200 - l/ss = 0V
Cass Output Capacitance - 520 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - -31 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - -110 p-n junction diode. s
I/so Diode Forward Voltage - - -1.3 V TJ = 25°C, ls = -16A, I/ss = 0V ©
tn Reverse Recovery Time - 71 110 ns TJ = 25°C, IF = -16A
G, Reverse RecoveryCharge - 170 250 nC di/dt = -100A/ps (0
Notes:
co Repetitive rating; pulse width limited by @ ISD f -16A, di/dt S -280A/ps, I/oo S V(BR)DSS,
max. junction temperature. (See Ftg. 11 ) TJ 3 175°C
© VDD = -25V, starting Tu = 25°C, L = 2.1mH G) Pulse width S 300ps; duty cycle S 2%.
Rs = 259, IAS = -16A. (See Figure 12)

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