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IRF5305LIRN/a11avai-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
IRF5305SIRN/a500avai-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package


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IRF5305L-IRF5305S
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Reciiiier
Advanced Process Technology
Surface Mount (IRF5305S)
Low-profile through-hole (IRF5305L)
175°C Operating Temperature
Fast Switching
P-Channel
o Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efhcient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF5305L) is available for low-
proWsapplications.
Absolute Maximum Ratings
PD - 91386C
IRF5305S/ L
HEXFET0 Power MOSFET
VDSS = -55V
RDS(on) = 0.069
lro=-31A
D2Pak TO-262
Parameter
ID © TC = 25°C
Continuous Drain Current, Ves @ -10VS
l, @ TC = 100°C
Continuous Drain Current, Ves @ -10V©
Pulsed Drain Current (D6)
Pro @TA = 25°C
Power Dissipation
Pro @Tc = 25°C
Power Dissipation
Linear Derating Factor
0.71 Wl°C
Gate-to-Source Voltage
Single Pulse Avalanche Energy©©
280 m]
Avalanche Current0)
Repetitive Avalanche Energy©
Peak Diode Recovery dv/dt ©©
-5.8 V/ns
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, tor 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ. Max. Units
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)"
- 40 C/W

4/1/99
IRF5305S/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGs = 0V, lo = -250pA
AVRoam Static Drain-to-Source On-Resistance - - 0.06 n VGS = -10V, ID = -16A (ii)
Vegan) Gate Threshold Voltage -2.0 - -4.0 V Vros = VGs, ID = -250pA
gts Forward Transconductance 8.0 - - S VDs = -25V, ID = -16A©
loss Drain-to-Source Leakage Current - - -25 pA VDS = -55V, VGS = 0V
- - -250 I/os = -44V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -1OO VGS = -20V
ck Total Gate Charge - - 63 ID = -16A
As Gate-to-Source Charge - - 13 nC VDs = -44V
di Gate-to-Drain ("Miller") Charge - - 29 Vss = -10V, See Fig. 6 and 13 C1)6)
tdwn) Turn-On Delay Time - 14 - VDD = -28V
tr RiseTime - 66 - ns ID = -16A
tu(ott) Turn-Off Delay Time - 39 - Rs = 6.89
tf FallTime - 63 - RD = 1.69, See Fig. 10 Coco
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 1200 - VGS = 0V
Cess Output Capacitance - 520 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFETsymbol D
(Body Diode) - - -31 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - -110 p-n junction diode. S
VSD Diode Forward Voltage - - -1.3 V TJ = 25°C, Is = -16A, VGS = 0V ©
trr Reverse Recovery Time - 71 110 ns T: = 25°C, I; = -16A
Qrr Reverse Recovery Charge - 170 250 nC di/dt = -1OOA/ps ©©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = -25V, Starting Tu = 25°C, L = 2.1mH
Rs = 259, IAS-- -16A. (See Figure 12)
© Iso S -16A, di/dt S -280/Ups, VDD S V(BR)DSS!
TJ s 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

© Pulse width S 300ps; duty cycle f 2%.
© Uses IRF5305 data and test conditions

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