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IRF540PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
trtterrtatiionall
1:912 Rectifier
PD-9.373H
IFIF540
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
o Repetitive Avalanche Rated
0 175°C Operating Temperature
0 Fast Switching
lt Ease of Paralleling
tt Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Vryss = 100V
RDS(on) = 0.0779
ID = 28A
on-resistance and cost-eftectiveness.
The TO-220 package is universally preferred for all Commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
10 @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 28
lo @ Tc = 100°C Continuous Drain Current, Vias @ 10 V 20 A
IDM Pulsed Drain Current (f) 110
Pry @ Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 WPC
Ves Gate-to-Source Voltage £20 V
EAs Single Pulse Avalanche Energy © 230 mJ
IAR Avalanche Current C) 28 A
EAR Repetitive Avalanche Energy (i) 15 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
To Operating Junction and -55 to +175
Tsre Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibfcin (1.1 Nam)
Thermal Resistance
Parameter Min, Typ. I Max. Units
Raw Junction-to-Case - - 1 .0
Race Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
FINA Junction-to-Ambient - - 62 I
I RF54O
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(en)oss Drain-to-Source Breakdown Voltage 100 - - V VGS=0V, ID: 25011A
AVwwss/ATu Breakdown Voltage Temp. Coefficient -- 0.13 - V/°C Reference to 25°C, ID: 1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.077 n Ves=10V, Io=17A ©
l/asm Gate Threshold Voltage 2.0 - 4.0 V Vos=Vas, ID: 250pA
gis FonNard Transconductance 8.7 - - S Vos=50V, 19:17A C4)
loss Drain-to-Source Leakage Current - - 25 11A 1hos--100V, Vss--0V
- - 250 Vos=80V, Vas=OV, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - ..100 VGs=-20V
th Total Gate Charge ' - - 72 10:17A
Qgs Gate-to-Source Charge - - 11 nC VDs=80V
di Gate-to-Drain ("Miller") Charge - - 32 Ves=10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 11 -... Von=50V
tr Rise Time - 44 - ns lo=17A
td(oit) Turn-Off Delay Time - 53 - Re=9.1§2
h Fall Time - 43 - RD=2.9§2 See Figure 10 C4)
Lo Internal Drain Inductance - 4.5 - t,it(rl/Ltief) D
nH from package GE:
Ls Internal Source Inductance - 7.5 - Ind center 6f
die contact s
Ciss Input Capacitance - 1700 - Vss=OV _
Coss Output Capacitance - 560 - pF Vos=25V
Crss Reverse Transfer Capacitance - 120 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Test Conditions
Is Continuous Source Current - - 28 MOSFET symbol D
(Body Diode) A showing the L,-,,-':
ISM Pulsed Source Current - - 1 IO integral reverse G trl
(Body Diode) co p-n junction diode. S
Van Diode Forward Voltage - - 2.5 V TJ=25°C, ls=28A, Ves=0V (E)
tn Reverse Recovery Time - 180 360 ns TJ=250C, 1F=17A
er Reverse Recovery Charge - 1.3 2.8 p1C di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(i) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L--440PH
Ra=25n, lAs=28A (See Figure 12)
TJS175"C
® Isos28A, di/dts170A/us, VDDSV(BR)DSS,
© Pulse width S 300 us; duty cycle S2%.
