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IRF5806
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
PD - 93997A
International
TOR Rectifier IRF5806
HEXFET@ Power MOSFET
0 Ultra Low On-Resistance Voss RENO”) max ID
q P-Channel MOSFET -
q Surface Mount -20V 86mn@Vss - -4.5V -4.0A
q Available in Tape & Reel 147mn@Vss - -2.5V -3.0A
q Low Gate Charge
Description
These P-channelMOSFETs fromlnternational Rectifier D 1 ' ' 6 D
utilize advanced processing techniques to achieve the J r,
extremely low on-resistance per silicon area. This sz E 5m D
benefit provides the designerwith an extremely ethcient
device for use in battery and load management 3 4
applications. G [E S
The TSOP-6 package with its customized leadframe Top View TSOP-6
produces a HEXFETO power MOSFET with RDSM)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.0
lo @ TA = 70°C Continuous Drain Current, VGs @ -4.5V -3.3 A
IDM Pulsed Drain CurrentO -16.5
Pro @TA = 25°C Maximum Power Dissipation© 2.0 W
PD @TA = 70°C Maximum Power Dissipation© 1.3 W
Linear Derating Factor 0.02 W/''C
VGs Gate-to-Source Voltage * 20 V
To , TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient) 62.5 "C/W
1
1/22/03
IRF5806 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.011 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - 47.1 86 mn VGS = -4.5V, ID = -4.0A ©
- 67.5 147 VGS = -2.5V, ID = -3.OA ©
VGS(th) Gate Threshold Voltage -0.45 - -1.2 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 6.4 - - S Vos = -10V, ID = -4.0A
loss Drain-to-Source Leakage Current - - -15 pA N/ns = -16V, VGS = 0V (2
- - -25 V93 = -16V, Vss = 0V, Tu = 70 C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - 100 VGs = 12V
% Total Gate Charge - 8.3 11.4 ID = -4.0A
Qgs Gate-to-Source Charge - 1.2 - nC Vos = -161/
di Gate-to-Drain ("Miller") Charge - 2.6 - VGS = -4.5V
tdon) Turn-On Delay Time - 6.2 9.3 VDD = -10V, VGS = -4.5V
tr Rise Time - 27 41 ns ID = -1.0A
td(off) Turn-Off Delay Time - 94 140 Rs = 6.09
tf Fall Time - 126 190 RD = lon C)
Ciss Input Capacitance - 594 - VGs = 0V
Coss Output Capacitance - 114 - pF VDS = -15V
Crss Reverse Transfer Capacitance - 87 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.0 showing the
ISM Pulsed Source Current - - -16 5 A integral reverse G
(Body Diode) (D . p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.0A, VGs = 0V ©
trr Reverse Recovery Time - 116 174 ns To = 25''C, IF = -2.0A
Qrr Reverse Recovery Charge - 90 135 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by (3 When mounted on 1 inch square Copper board, ts 10sec.
max. junction temperature.
© Pulse width I 300ps; duty cycle 3 2%.
2
