IRF5850TRPBF ,-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 packageapplicationswhere printed circuit board space is at a premium andwhere maximum functionality is ..
IRF5851 ,20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 packagePD-93998BIRF5851®HEXFET Power MOSFETN-Ch P-Ch Ultra Low On-ResistanceG1 D11 6 Dual N and P Chan ..
IRF5852 ,20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 packagePD - 93999AIRF5852HEXFET Power MOSFETV R max ( I Ultra Low On-Resistance DSS DS(on) D Dual N- ..
IRF5852TR ,20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 packageapplicationsTSOP-6Top Viewwhere printed circuit board space is at a premium andwhere maximum fu ..
IRF5852TRPBF ,20V Dual N-Channel HEXFET Power MOSFET in a TSOP-6 packageapplicationswhere printed circuit board space is at a premium andwhere maximum functionality is ..
IRF610 ,3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFETInternational
ISBR
Rectifier
PD-9.326l
IRF610
HEXFET® Power MOSFET
. Dynamic dv/d ..
IS62LV12816BLL-70TI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816LL-55BI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816LL-55TI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816LL-70BI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816LL-70TI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816LL-70TI , 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IRF5850TRPBF
-20V Dual P-Channel HEXFET Power MOSFET in a TSOP-6 package
International
TOR Rectifier
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
Halogen-Free
Description
These P-channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
PD - 95506B
IRF5850PbF
H EXFET® Power MOSFET
Gl ',r'jiiir,',''j, [Y l/DSS = -20V
S 2 jii'itir_,',_, Si
02 J ED D2 RDS(on) = 0.1359
Top View
TSOP-6
die per package, the IRF5850 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDSM)
reduction enables an increase in current-handling
capability.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -20 V
ID © TA = 25°C Continuous Drain Current, Vss @ -4.5V -2.2
ID @ TA-- 70°C Continuous Drain Current, Vss @ -4.5V -1.8 A
IDM Pulsed Drain Current (D -9.0
PD @TA = 25°C Power Dissipation 0.96 W
PD @TA = 70°C Power Dissipation 0.62
Linear Derating Factor 7.7 mW/°C
VGS Gate-to-Source Voltage 1 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 130 °C/W
1
04/17/12
IRF5850PbF International
TOR Rectifier
Electrical Characteristics @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vas = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.011 - V/°C Reference to 25°C, ID = -1mA
Roson) Static Drain-to-Source On-Resistance - - 0.135 Q l/ss = -4.5V, ID = -2.2A ©
- - 0.220 l/ss = -2.5V, ID = -1.9A ©
Vegan) Gate Threshold Voltage -0.45 - -1.2 V Vos = I/ss, ID = -250pA
gts Forward Transconductance 3.5 - - S Vos = -10V, ID = -2.2A
loss Drain-to-Source Leakage Current - - -1.0 pA Vos = -16V, Vss = 0V
- - -25 V03 = -16V, l/ss = 0V, Tu = 125°C
I Gate-to-Source Forward Leakage - - -100 n A Vss = -12V
GSS Gate-to-Source Reverse Leakage - - 100 Vas = 12V
% Total Gate Charge - 3.6 5.4 ID = -2.2A
Qgs Gate-to-Source Charge - 0.66 - nC I/os = -10V
di Gate-to-Drain ("Miller") Charge - 0.83 - Vss = -4.5V ©
tdmn) Turn-On Delay Time - 8.3 - VDD = -10V ©
t, Rise Time - 14 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 31 - Rs = 6.on
if Fall Time - 28 - Vas = -4.5V
Ciss Input Capacitance - 320 - Vas = 0V
Coss Output Capacitance - 56 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 40 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 0 96 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current 9 0 integral reverse G
(Body Diode) OD - - . p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -0.96A, l/ss = 0V ©
t,, Reverse Recovery Time - 23 35 ns Tu = 25°C, IF = -0.96A
Qrr Reverse Recovery Charge - 7.7 12 I di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by (3) Surface mounted on FR-4 board, ts Ssec.
max. junction temperature.
© Pulse width f 400ps; duty cycle 3 2%.
2
