IRF610PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
ISBR
Rectifier
PD-9.326l
IRF610
HEXFET® Power MOSFET
. Dynamic dv/d ..
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IRF610-IRF610PBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
1:212 Rectifier
PD-9.32_6l
(IRF610
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
o Repetitive Avalanche Rated
o FastSwitching
It Ease of Paralleling
o Simple Drive Requirements
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D VDSS = 200V
r, RDS(on) .T.T. 1.59
s ID = 3.3A
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter Max. Units
In @ Tc = 25°C Continuous Drain Current, l/ss @ 10 V 3.3
Io © Tc = 100°C Continuous Drain Current, Ves © 10 V 2.1 A
km, Pulsed Drain Current (IC) 10
Pn @ Tc = 25°C Power Diissipation 36 W
Linear Derating Factor 0.29 WPC
Ves GateiSource Voltage :20 V
EAS Single Pulse Avalanche Energy © 64 ml
IAR Avalanche Current co 3.3 A
EAR Repetitive Avalanche Energy co 3.6 md
dv/dt Peak Diode Recovery dv/dt co 5.0 V/ns
To Operating Junction and -55 to +150
Tsm Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 Nun)
Thermal Resistance
1 Parameter Min. Typ: Max. Units
Rm Junction-to-Case - - 3.5
Hoes Case-to-Sink, Flat, Greased Surface - 0.50 - oC/W
Rm Junction-to-Ambient - F - 62
1RF610
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGs=OV, ID: 250ptA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.30 - V/°C Reference to 25°C, ID: 1mA
Flosmn) Static Drain-to-Source On-Resistance - - 1.5 Q Vss=10V, 10:2.0A ©
VGS(th) Gate Threshold Voltage 2.0 -- 4.0 V VDs=VGs, Iro= 2501.1A
gas Forward Transconductance 0.80 - - s Vos=50V. ID=2.0A ©
loss Drain-to-Source Leakage Current - - 25 uA Vrs=200V, VGS=0V
- - 250 Vns=160V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
Qg Total Gate Charge - - 8.2 ID=3.3A
Qgs Gate-tO-Source Charge - - 1 .8 nC Vos=160V
di Gate-to-Drain ("Miller") Charge - - 4.5 Ves=1OV See Fig, 6 and 13 ©
td(on) Turn-On Delay Time - 8.2 - VDD=100V
tr Rise Time - 17 - ns |D=3.3A
td(oit) Tu rn-Off Delay Time - 14 - Rs=24n
tt Fall Time - 8.9 - Ro=30§2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - ttiitr('on.lrei.') T D
nH from package (3Q:
Ls Internal Source Inductance - 7.5 - Ind center df 'jj)
die contact s
Ciss input Capacitance - 140 - VGs=OV
Cass Output Capacitance - 53 -- PF Vosr25V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 3 3 MOSFET symbol D
(Body Diode) . A showing the (I-lic)
ISM Pulsed Source Current - - 10 integral reverse G :3.
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, 13:3.3A, Vas--0V ©
tn Reverse Recovery Time - 150 310 ns TJ=25°C, IF=3.3A
Gr Reverse Recovery Charge - 0.60 1.4 110 di/dt---100A/pts ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=5OV, starting TJ=25°C, L=8.8mH
RG=25Q, |As=3.3A (See Figure 12)
© Isos3.3A. di/dts.70/Ws, VDDSV(BR)DSS,
TJS150°C
© Pulse width C 300 us; duty cycle s2%.
