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IRF610. |IRF610FSCN/a89avai3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET


IRF610. ,3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFETFeaturesMOSFET• 3.3A, 200VThis N-Channel enhancement mode silicon gate power field = 1.500Ω•rDS(ON) ..
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IRF610B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.3A, 200V, R = 1.5Ω @V = 10 VDS(on) ..
IRF610B ,200V N-Channel MOSFETIRF610B/IRFS610BNovember 2001IRF610B/IRFS610B200V N-Channel MOSFET
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IRF610.
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
IRF610
3.3A, 200V, 1.500 Ohm, N-Channel Power
MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17442.
Features
3.3A, 200V
DS(ON)
= 1.500 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
Ordering Information

NOTE: When ordering, use the entire part number. G
GATE
DRAIN (FLANGE)
SOURCE
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