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IRF6100
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package
International
TOR Rectifier
PD - 93930F
lRF6100
HEXFET6 Power MOSFET
0 Ultra Low RDS(on) Per Footprint Area Voss RDSion) max ID
0 Low Thermal Resistance _20v 0-0659@VGS = -4.5V -5.1A
q t-Chy.ntl, MOSFET 0.0959@sz = -2.5v -4.1A
. One-third Footprint of SOT-23
0 Super Low Profile (<.8mm)
0 Available Tested on Tape & Reel
Description
True chip-scale packaging is available from International D
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low I 'r--"' . I-:
on-resistance and the highest power densities in the ' $1" __..' "' "
industry have been made available for battery and load G _
managementapplications.These benefits,combined with
the ruggedized device design , that International Rectifier
is well known for, provides the designer with an ex- s FlipFE-l-TM ISOMETRIC
tremely efficient and reliable device.
The FlipFET'" package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET'" the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -20 V
lo @ TA = 25°C Continuous Drain Current, Vss @ 4.5V t5.1
b © TA = 70°C Continuous Drain Current, l/tss @ 4.5V t3.5 A
G, Pulsed Drain Current C) t35
PD @TA = 25°C Power Dissipation@ 2.2 W
PD @TA = 70°C Power Dissipation® 1.4
Linear Derating Factor 17 mW/°C
VGS Gate-to-Source Voltage t 12 V
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJA Junction-to-Ambient® 56.5 °CNV
R9J_PCB Junction-to-PCB mounted 35 -
1
07/13/06
IRF6100
International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Ves = 0V, ID = -250pA
AV(BR)DSs/ATJ Breakdown Voltage Temp. Coefficient - -0.010 - VPC Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 0.065 Q VGS = -4.5V, ID = -5.1A ©
- - 0.095 VGS = -2.5V, ID = -4.1A ©
Vegan) Gate Threshold Voltage -0.45 - -1.2 V Vos = Vas, ID = -250pA
gts Forward Transconductance 9.8 - - S Vos = -10V, ID = -5.1A
bss Drain-to-Source Leakage Current - - -1.0 PA VDS = -20V, l/iss = 0V
- - -25 l/rss = -16V, Vas = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
% Total Gate Charge - 14 21 ID = -5.1A
Qgs Gate-to-Source Charge - 1.9 2.9 nC Vos = -16V
di Gate-to-Drain ("Miller") Charge - 5.0 7.5 Vss = -5.0V
td(on) Turn-On Delay Time - 12 - VDD = -10V
tr Rise Time - 12 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 50 - Ra = 5.89
tt Fall Time - 50 - Vas = -4.5V ©
Ciss Input Capacitance - 1230 - Vss = 0V
Cogs Output Capacitance - 250 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 180 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.2 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -33 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.2A, VGS = 0V ©
trr Reverse Recovery Time - 48 72 ns To = 25°C, V = -2.2A
Qrr Reverse RecoveryCharge - 34 51 nC di/dt = 1OOA/ps C)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width 3 400ps; duty cycle S 2%.
© When mounted on 1 inch square 202 copper on FR-4.
