IRF614S ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD-9.1003
IRF614S
lhternatiqnal
TOR Rectifier
HEXFET® Power MOSFET
. Surface Mount
..
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IRF614S
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD-9.1003
thtetnatii9!yg
TOR Rectifier I R F61 4S
HEXFET® Power MOSFET
q Surface Mount
0 Available in Tape & Reel D
o Dynamic dv/dt Rating VDSS = 250V
0 Repetitive Avalanche Rated
o Fast Switching ' " RDSM) = 2.09
0 Ease of Paralleling
o Simple Drive Requirements
S ID = 2.7A
Description
Third Generation HEXFETs from international Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
Parameter Max. Units
lo @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 2.7
In © To = 100°C Continuous Drain Current, I/ss @ 10 V 1.7 A
IDM Pulsed Drain Current (D 8.0
Po @ To = 25°C Power Dissipation 36 W
Po @ TA: 25°C Power Dissipation (PCB Mount)" 3.1
Linear Derating Factor 0.29 W PC
Linear Derating Factor (PCB Mount)" 0.025
Ves Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy © 61 md _
ian Avalanche Current C) 2.7 A
EAR Repetitive Avalanche Energy C) 3.6 mJ
dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns
To, TSTS Junction and Storage Temperature Range -55 to +150 y °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min, Typ. Max. Units
Flax: Junction-to-Case V - - 3.5
RBJA Junction-to-Ambient (PCB mount)" - - 4O °C/W
Rm Junction-to-Ambient - - 62
" When mounted on 1" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
I.RF614S
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ, Max, Units Test Conditions
V(samss Drain-to-Source Breakdown Voltage 250 - - V Ves=0V, Io: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.39 - VPC Reference to 25°C, In: 1mA
Rrrsom Static Drain-to-Source On-Resistance - - 2.0 Q 1/ar=10V, 10:1.6A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 2500A
Ws Forward Transconductance 0.90 - P........ S VDs=50V, ID=1.6A CO
loss Drain-to-Source Leakage Current - - 25 pA Vos=250V, Vss=0V
- - 250 VDs=2OOV, Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=2OV
Gate-to-Source Reverse Leakage - - -100 VGs=-2OV
% Total Gate Charge - - 8.2 |D=2.7A
Qgs Gate-to-Source Charge - - 1.8 nC Vos=2OOV
di Gate-to-Drain ("Miller") Charge - - 4.5 Vss=10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 7.0 - Voo=125V
tr Rise Time .- 7.6 - ns 10:2.7A
td(ott) Turn-Off Delay Time - 16 - Rs=24n
t1 Fall Time - 7.0 - RD=45§2 See Figure 10 (4)
Lo Internal Drain Inductance - 4.5 - t inf ite. ') D
nH from package ii)]; )
Ls Internal Source Inductance - 7.5 - Ind center 6f
die contact s
Ciss Input Capacitance - 140 -.- VGs=OV
Cogs Output Capacitance - 42 - pF V05: 25V
Crss Reverse Transfer Capacitance - 9.6 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ, Max. Units Test Conditions
ls Continuous Source Current _ - 2 7 MOSFET symbol D
(Body Diode) . A showing the j-.,
ISM Pulsed Source Current - w 8 0 integral reverse G (n-u,
(Body Diode) OD . p-n junction diode. S
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, Is=2.7A, Vss=OV ©
trr Reverse Recovery Time - 190 390 ns TJ=25°C, IF=2.7A
G, Reverse Recovery Charge - 0.64 1.3 wc di/dt=100A/prs ©
ton Forward Turn-On Time Intrinsic turn-on time is negiegible (turn-on is dominated by Ls+LD)
Notes: I
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=13mH
RG=25§2, lAs=2.7A (See Figure 12)
© Isosz.7A, di/dtg65A/gs, VDDSV(BR)DSS.
TJS150°C
© Pulse width S 300 us; duty cycle s2%.
