IRF6156 ,20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFETapplications whereprinted circuit board space is at a premium and in extremely thinapplication envi ..
IRF620 ,5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFETIRF620IRF620FPN-CHANNEL 200V - 0.6Ω - 6A TO-220/FPPowerMesh™II MOSFETTYPE V R IDSS DS(on) DIRF620 2 ..
IRF6201TRPBF ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageFeatures BenefitsLow R (≤ 2.45mΩ @ Vgs = 4.5V) Lower conduction lossesDSonresults in Industry-stan ..
IRF620PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR
Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
q Repetitive A ..
IRF620S ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF621 ,N-Channel Power MOSFETs/ 7A/ 150-200Vapplications, ts) l
such as switching power supplies, converters, AC and DC
motor controls, relay ..
IS62LV2568LL-70H , 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV2568LL-70HI , 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV2568LL-70HI , 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV2568LL-85H , 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV2568LL-85HI , 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
IS62LV256AL-20TLI , 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IRF6156
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
International
a:aRlectifier
PD - 94592A
IRF6156
q Ultra Low RSS(0n) per Footprint Area FIipFETTM Power MOSFET
q Low Thermal Resistance
0 Bi-Directional N-Channel Switch Vss Rssion) max ls
q Super Low Profile (<.8mm) 20V 40mf2@Vsm,2 = 4.5V 1.65
o Available Tested on Tape & Reel
. . = . +
o ESD Protection Diode © 60mQ@VGs1,2 2 5V -5.2
Description
True chip-scale packaging is available from International Recti- I
fer. Through the use of advanced processing techniques and a - if'
unique packaging concept, extremely low on-resistance and the _/ g:
highest powerdensities in the industry have been made available
for battery and load management applications. These benefits,
combined with the ruggedized device design that International
Rectifer is well known for, provide the designer with an
extremely efMient and reliable device.
The FIipFETTM package, is one-Wh the footprint ofa comparable
TSSOP-8 package and has a profile of less than .8mm. Com-
bined with the Iowthermal resistance ofthe die level device, this
makes the FlipFETT" the best device for applications where
printed circuit board space is at a premium and in extremely thin
application environments such as battery packs, mobile phones
and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vss Source-to-Source Voltage 20 V
Is @ TA = 25''C Continuous Current, Vss, = V632 = 4.5V © 16.5
Is @ TA = 70°C Continuous Current, VGs1 = V652 = 4.5V © 152 A
ISM Pulsed Current C) 33
PD @TA = 25°C Power Dissipation © 2.5 W
Pn @TA = 70°C Power Dissipation © 1.6
Linear Deratinq Factor 20 mW/°C
VGS Gate-to-Source Voltage A12 V
TJ Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJA Junction-to-Ambient © - 50 °C/W
Rupee Junction-to-PCB 35 -
09/25/03
IRF6156 International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)SSS Source-to-Source Breakdown Voltage 20 - - V Ves=0V, ls=250pA,See Fig. 23a&b
AV(BR)SSS/ATJ Breakdown Voltage Temp. CoefMient - 16 - mV/°C Reference to 25oC,ls=1mA,Fig.23ao
RSS(on) Static Source-to-Source On-Resistanc - 27 40 mg VGS1.2 = 4.5V, Is = 6.5A © Fig.11a&b
- 43 60 ma = 2.5V, ls = 5.2A ©
VGS(m) Gate Threshold Voltage O.45 - 1.2 V Vss = VGS, ls = 250% © Fig. 10a&b
gfs Forward Transconductance 18 - - S Vss = 10V, Is = 6.5A, See Fig. 4
- - 1.0 pA Vss = 20V, N/ss = 0V,See Fig.23a&b
lsss Zero Gate Voltage Source Current - - 25 I/ss = 16V, Veg = 0V, T, = 125°C
- 50 - nA Vss = 4.5V, N/ss = 0V, TJ = 25°C
- 100 - Vss = 4.5V, VGs = 0V, TJ = 60°C
less Gate-to-Source Forward Leakage - 8.0 20 PA VGs = 12V, See Fig. 22
Gate-to-Source Reverse Leakage - -8.0 -20 Vss = -12V
Gate-to-Source Forward Leakage - 0.20 0.5 pA N/ss = 4.5V
Gate-to-Source Reverse Leakage - -0.20 -0.5 VGS = -4.5V
q, Total Gate Charge - 12 18 Is = 6.5A
Qgs Gate-to-Source Charge - 1.6 2.4 no Vss = 16V
001-32 Miller Charge - 4.4 6.6 Ves = 5.0V, See Fig. 14a,b&c
tum) Turn-On Delay Time - 8.0 - Vss = 10V
t, Rise Time - 13 - ns ls = 1.0A
tam“) Turn-Off Delay Time - 33 - Rs = 3.09
t, Fall Time - 26 - Vss = 5.0V, See Fig. 21a,b&c
Ciss Input Capacitance - 950 - VGS = 0V
Coss Output Capacitance - 210 - pF Vss = 15V
Crss Reverse Transfer Capacitance - 150 - f = 1.0KHz, See Fig. 13a,b,c,d,e&f
V551 Source-to-Source Diode Forward - - 1.2 V See Fig. 17a&b
Voltage, One Device On Iss = 2.5A
Notes:
co Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width s 400ps; duty cycle S 2%. Gate voltage applied to both gates.
© When mounted on 1 inch square 2oz copper on FR-4.
© Figures 1, 2 and 3: One Fet is biased with VGS = 9.0V and curves show response of the second FET.
See Fig.4.
s Figures 5, 6 and 7: G1 and G2 are shorted. See Fig.9a&b.
© The diode connected between the gate and source serves only as protection against ESD.
No gate over voltage rating is implied.
2
