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IRF620SIRN/a1350avai200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


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IRF620S
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
"rttett!atipgall
Rectifier
PD-9.900
IRFSZOS
HEXFET® Power MOSFET
o Surface Moun
Ease of Parall
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, Iow
on-resistance and
The SMD-22O is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirements
cost-effectiveness.
Absolute Maximum Ratings
SMD-220
_________7_ - - _ Parameter - - 2 3433-2222 Units
ID @ Tc = 25°C Continuous Dr§i_n_QLJ_rrent, Vas @ 10 V 5.2
3.09 I911 99°C Continuous Drain Current, Ves @ 10 V _ -- - _ _ -2 -fr A
k_otvu__.._._., flulsed Drain Current G) 18
Pro @ Tc = 25°C nglej 91th 50 W
Po @ TA s 25°C Power Dissipation_fTrAloypt_)C - 3.0
Linear Derating Factor 0.40 i
. . . - - - _-_-- __-__-___-___ --.__ W/°C
- - _ _ Ai1eiCp_e_rating Factor (PCB Mount)" T 0.025
39% y _ - - _ _ 'ate-to-Source Voltage T :20 V
_EAs - __ _ - 1iirlg_lefulse Avalanche Energy Q) 1 110 ml
1Ae - _ ___ __/1el_aLnphe Current co 1 5.2 I A
EAR F%pe1itle/)yalanche Energy C) I 5.0 , md
dv/dt F'eak_D_ip_efPeery_dv/dt (3) i 5.0 V/ns
TJ, TSTG Junction and Stor1gArtype!yyryd1a.ty1e. ( -55 to +150 Q C
_._ _ _ A - .-- - Ao_llering Temperature, for 10 seconds 1 300 (1.6mm from case) " __
Thermal Resistance
l. PEEK“ ______ I Min. Typ. Max. Units
Rac te-_---------- Junction-to-Case ------r---P--, - Si 2 - 2 -,-r--___flfs,
Rm Junction-toc/IT,].!]!)' mount)" - _=., 40 °C/W
ReJA Junction-to/PAY! . _ - - _ _ - ___ - 1 - 62
** When mounted on I" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF620S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. I Max. Units - Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGs=OV, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.29 - V/°C Reference to 25°C, lo; .1 mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.80 Q Ves=1OV, ID=3.1A © I
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V I VDs=VGs, ID: 250uA _
gfs I Forward Transconductance 1.5 - - S Vos=50V, |o=3.1A ©
loss I Drain-to-Source Leakage Current - - 25 HA VDs--200V, VGS=OV
- - 250 VDs=160V, VGs=0V, TJ=12500
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -1OO Nrs---'kUN
09 Total Gate Charge - - 14 ID=4.8A
Qgs Gate-to-Source Charge - - 3.0 no Vos=160V
di Gate-to-Drain ("Miller") Charge - - 7.9 VGs=1OV See Fig. 6 and 13 ©
tam”) Turn-On Delay Time - 7.2 - VDD=100V
tr Rise Time - 22 - ns i |D=4.8A
td(oit) Turn-Off Delay Time - 19 -rq ' Re=189
tf Fall Time - 13 - Rrr--20n See Figure 10 Cr)
u, Internal Drain Inductance - 4.5 - t,',t7/rillt),d.') D
_ nH from package GE )
Ls Internal Source Inductance - 7.5 - and center 6f
die contact s
Ciss Input Capacitance - 260 - VGs=OV
_Coss Output Capacitance - 100 - pF Vos-- 25V
Crss Reverse Transfer Capacitance - 30 - i=1 .OMHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. I Units Test Conditions
ls Continuous Source Current - - 5 2 1 MOSFET symbol D
(Body Diode) . A . showing the trj:
ISM Pulsed Source Current - - 18 integral reverse G trl.',
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, ls=5.2A, VGs=0V (E)
in Reverse Recovery Time - 15p_ilt10, -ns_, TJ=25°C, IF=4.8A
C),, Reverse Recovery Charge - 0.91 _1._8_ rd. -dr(ftt1pCA/e1s lr
lsn Forward Turn-On Time Intrinsic turr;n tin1€ is nUsiitue (turn-én is dominated by Ls+LD)
Notes:
6) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=5OV, starting TJ=25°C, L=6.1mH
RG=259, |As=5.2A (See Figure 12)
TJS150°C
lj) IsDS5.2A, di/de95A/rus, VDDSV(BR)DSS.
CI) Pulse width S 300 us; duty cycle 32%.
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