IRF6217 ,-150V Single P-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Reset Switch for Active Clamp Reset-150V 2.4Ω Ω Ω Ω Ω@V =-10V -0 ..
IRF6217TRPBF ,-150V Single P-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Reset Switch for Active Clamp Reset-150V 2.4@V =-10V -0.7A GSD ..
IRF6217TRPBF ,-150V Single P-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Reset Switch for Active Clamp Reset-150V 2.4@V =-10V -0.7A GSD ..
IRF6217TRPBF ,-150V Single P-Channel HEXFET Power MOSFET in a SO-8 packageIRF6217PbFSMPS MOSFETHEXFET Power MOSFET
IRF6218S ,-150V Single P-Channel HEXFET Power MOSFET in a D2Pak packageApplications Reset Switch for Active ClampV R max IDSS DS(on) DReset DC-DC converters
IRF6217
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
Applications
o Reset Switch for Active Clamp Reset
DC to DC converters
SMPS MOSFET
PD - 94359
|RF6217
HEXFET© Power MOSFET
Voss RDS(on) max ID
M50V 2.49@sz =-10V -0.7A
Benefits
. Low Gate to Drain Charge to Reduce a D
Switching Losses D31
. Fully Characterized Capacitance Including 'v, D
Effective Coss to Simplify Design (See 6% D
App. Note AN1001) 5 D
0 Fully Characterized Avalanche Voltage ED:
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -0.7
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -O.5 A
G, Pulsed Drain Current C) -5.0
PD @TA = 25°C Power Dissipation© 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage l 20 V
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20
ReJA Junction-to-Ambient © - 50 °CNV
Notes co through © are on page 8
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02/13/02
IfRF6217
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -150 - - V VGs = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefhcient - -0.17 - V/°C Reference to 25°C, ID = -1mA ©
RDS(on) Static Drain-to-Source On-Resistance - - 2.4 Q VGS = -10V, ID = -0.42A ©
VGS(1h) Gate Threshold Voltage -3.0 - -5.0 V Vos = Vss, ID = -250pA
loss Drain-to-Source Leakage Current - - -25 pA VDS = -150V, VGS = ov, To = 25°C
- - -250 Vros = -120V, VGs = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - -100 n A VGs = -20V
GSS Gate-to-Source Reverse Leakage - - 100 VGs = 20V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 0.55 - - S Vos = -50V, ID = -0.42A
Qg Total Gate Charge - 6.0 9.0 ID = -0.42A
Qgs Gate-to-Source Charge - 1.6 2.4 nC Vos = -120V
di Gate-to-Drain ("Miller") Charge - 2.8 4.2 VGS = -10V,
td(on) Turn-On Delay Time - 12 - VDD = -75V
tr Rise Time - 7.2 - ns ID = -0.42A
tam) Turn-Off Delay Time - 14 - Rs = 6.29
tr Fall Time - 16 - VGs = -10V ©
Ciss Input Capacitance - 150 - VGS = 0V
Coss Output Capacitance - 30 - Vos = -25V
Crss Reverse Transfer Capacitance - 10 - pF f = 1.0KHz
Coss Output Capacitance - 150 - N/ss = 0V, Vros = -1.0V, f = 1.0KHz
Cass Output Capacitance - 15 - VGs = 0V, VDs = -120V, f = 1.0KHz
Coss eff. Effective Output Capacitance - 45 - VGs = 0V, Vos = 0V to -120V
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 15 mJ
IAR Avalanche Current0) - -1.4 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -1 8 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) _ - -5.0 p-n junction diode. s
VSD Diode Forward Voltage - - -1.6 V To = 25°C, Is = -0.42A, VGs = 0V ©
trr Reverse Recovery Time - 51 77 ns To = 25°C, IF = -0.42A
Qrr Reverse RecoveryCharge - 86 130 nC di/dt = -100/Ups ©
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