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IRF630STCN/a2avai9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
IRF630FPSTN/a760avaiN


IRF630FP ,NELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
IRF630M ,N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFETIRF630MIRF630MFPN-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FPMESH OVERLAY™ MOSFETTYPE V R IDSS DS(on) ..
IRF630MFP ,N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFETAPPLICATIONS■ MONITOR DISPLAYS■ GENERAL PURPOSE SWITCH
IRF630N ,N-Channel Power MOSFETs 200V, 9.3A, 0.30-OhmFeatures UIS Rating Curve• Ultra Low On-Resistance-r = 0.200Ω (Typ), V = 10VDS(ON) GS  Simulation ..
IRF630N.. ,N-Channel Power MOSFETs 200V, 9.3A, 0.30-OhmPD - 94005BIRF630NIRF630NSIRF630NL Advanced Process Technology® Dynamic dv/dt RatingHEXFET Power ..
IRF630NPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
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IRF630-IRF630FP
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
1/9October 2001
IRF630
IRF630FP

N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP
MESH OVERLAY™ MOSFET TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION

This power MOSFET is designed using the compa-
ny’s consolidated strip layout-based MESH OVER-
LAY™ process. This technology matches and
improves the performances compared with standard
parts from various sources.
.APPLICATIONS
HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC-AC CONVERTERS FOR TELECOM
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area
(1)ISD ≤9A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(**) Limited only by Maximum Temperature Allowed
IRF630 / FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF (1)
DYNAMIC
3/9
IRF630 / FP
ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220FPSafe Operating Area for TO-220
IRF630 / FP
Static Drain-source On ResistanceTransconductance
Transfer CharacteristicsOutput Characteristics
Thermal Impedence for TO-220
5/9
IRF630 / FP
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For

Resistive Load
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