IRF630N ,N-Channel Power MOSFETs 200V, 9.3A, 0.30-OhmFeatures UIS Rating Curve• Ultra Low On-Resistance-r = 0.200Ω (Typ), V = 10VDS(ON) GS Simulation ..
IRF630N.. ,N-Channel Power MOSFETs 200V, 9.3A, 0.30-OhmPD - 94005BIRF630NIRF630NSIRF630NL Advanced Process Technology® Dynamic dv/dt RatingHEXFET Power ..
IRF630NPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRF630NS ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications at power dissipation levelsto approximately 50 watts. The low thermal resistance andl ..
IRF630NS ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
IRF630NSPBF ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of itslow internal connection resistance and can dissipate up to2.0W in a typi ..
IS62WV20488BLL-25TLI , 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
IS62WV25616BLL , 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-55BLI , 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-55T , 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-70T , 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-70T , 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IRF630N
N-Channel Power MOSFETs 200V, 9.3A, 0.30-Ohm
IRF630N/IRF630NS/IRF630NL January 2002 IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Peak Current vs Pulse Width Curve Features UIS Rating Curve • Ultra Low On-Resistance -r = 0.200Ω (Typ), V = 10V DS(ON) GS Simulation Models © - Temperature Compensated PSPICE® and SABER Electrical Models © - Spice and SABER Thermal Impedance Models SOURCE SOURCE DRAIN DRAIN DRAIN GATE (FLANGE) GATE DRAIN D (FLANGE) GATE G SOURCE DRAIN (FLANGE) S TO-263 TO-262 TO-220 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 200 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 9.3 A Continuous (T = 25 C, V = 10V) C GS I D o Continuous (T = 100 C, V = 10V) 6.5 A C GS Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 94 mJ AS Power dissipation 82 W P D o o Derate above 25 C 0.55 W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-262, TO-263 1.83 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 40 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 630N IRF630NS TO-263AB 330mm 24mm 800 units 630N IRF630NL TO-262AA Tube N/A 50 630N IRF630N TO-220AB Tube N/A 50 ©2002 Rev. B
