IRF630S ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInteroatipytl
I912 Rectifier
PD-9.901
IRF630S
HEXFETO Power MOSFET
. Surface Mount
..
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IRF630S
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
1:212 Rectifier
HEXFETO Power MOSFET
q Surface Mount
0 Available in Tape & Reel
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
q FastSwitching
o Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.901
IRF630S
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-220
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
SMD-22O
L: =13
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Ves @ 10 V 9.0
In © To = 100°C Continuous Drain Current, Ves © 10 V 5.7 A
IDM Pulsed Drain Current (D 36
Po @ To = 25°C Power Dissipation 74 W
Po © TA = 25°C Power Dissipation (PCB Mount)" 3.0
Linear Derating Factor 0.59 W PC
Linear Derating Factor (PCB Mount)" ' 0.025
Ves Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy Q) 250 mJ
bin Avalanche Current C) 9.0 A
EAR Repetitive Avalanche Energy Ci) 7.4 mJ
dv/dt Peak Diode Recovery dy/dt © 5.0 V/ns
Tu, Tsm Junction and Storage Temperature Range -55 to +150 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rmc Junction-to-Case - - 1 .7
RBJA Junction-to-Ambient (PCB mount)" - - 40 “CW
RQJA Junction-to-Ambient - - 62
" When mounted on 1" square PCB (FR-4 or (3-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
1R F630S ,
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=5OV. starting TJ=25°C, L=4.6mH
Re=25£2, |As=9.0A (See Figure 12)
Parameter Min. Typ. Max. Units Test Conditions
V(Bamss Drain-to-Source Breakdown Voltage 200 - - V VGs=OV, ID: 2500A
AV(8R)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.24 - VPC Reference to 25''C, In: 1mA
RDson) Static Drain-to-Source On-Resistance - - 0.40 n VGS=10V, Io=5.4A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vas=Vas, kr-- 250yA
bs Forward Transconductance 3.8 - - S Vns=50V, Io=5.4A ©
loss . Drain-to-Source Leakage Current - - 25 WA Vos=200V, Vass--0V
- - 250 Vos=160V, VGs=0V, TJ=125°C
lass Gate-to-Source Forward Leakage - - 100 n A Vas--20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
ttlg Total Gate Charge _ - - 43 b---5.9A
Qgs Gate-to-Source Charge - - 7.0 nt Vos=160V
_ di Gate-to-Drain ("Miller") Charge - - 23 VGs=10V See Fig. 6 and 13 ©
tam.) Turn-On Delay Time - 9.4 - VDD=100V
tr Rise Time - 28 -.. ns lo=5.9A
tam Turn-Off Delay Time - 39 - RG=12§2
t: Fall Time - 20 - Ro=16§2 See Figure 10 ©
Ln Internal Drain Inductance - 4.5 - t2(rll12ti)f.; D
nH from package egg)
Ls Internal Source Inductance - 7.5 - a..nd center 6f
die contact s
Gigs input Capacitance - 800 - Ves=0V
Coss Output Capacitance -.. 240 - pF VDs=25V
Crss Reverse Transfer Capacitance - 76 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) _ - -.. ao A showing the
ISM Pulsed Source Current - - 36 integral reverse G
(Body Diode) C) p-n junction diode. s
Van Diode Forward Voltage - - 2.0 V TJ=25°C, ls=9.0A, VGS=OV ©
tn Reverse Recovery Time - 170 340 ns TJ=2500, IF=5.9A
er Reverse Recovery Charge - 1.1 2.2 “C di/dt=100A/ws (ip
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
© ISDSQDA, di/dr-MMA/ps, VDDSV(BR)Dss,
TJS150°C
C45 Pulse width f 300 ps; duty cycle c2%.
