IRF634B ,250V N-Channel MOSFETIRF634B/IRFS634BNovember 2001IRF634B/IRFS634B250V N-Channel MOSFET
IRF634N ,250V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications because of its low internal connection IRF634NS IRF634NLresistance and can dissipate u ..
IRF634NS ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 94310IRF634NIRF634NSIRF634NLl Advanced Process Technology®l Dynamic dv/dt Rating HEXFET Power ..
IRF634PBF ,250V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
1:212 Rectifier
HEXFET<) Power MOSFET
. Dynamic dv/dt Rating
Repetitive Ava ..
IRF634S ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRF634STRL ,250V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IS62WV25616BLL-70T , 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616BLL-70T , 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
IS62WV2568BLL-55HI , 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV2568BLL-55TI , 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV2568BLL-70BI , 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV2568BLL-70H , 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IRF634B
250V N-Channel MOSFET
IRF634B/IRFS634B November 2001 IRF634B/IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.1A, 250V, R = 0.45Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC) planar, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF634B IRFS634B Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 8.1 8.1 * A D C - Continuous (T = 100°C) 5.1 5.1 * A C I (Note 1) Drain Current - Pulsed 32.4 32.4 * A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 200 mJ AS I Avalanche Current (Note 1) 8.1 A AR E (Note 1) Repetitive Avalanche Energy 7.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 74 38 W D C - Derate above 25°C 0.59 0.3 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF634B IRFS634B Units R Thermal Resistance, Junction-to-Case Max. 1.69 3.29 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
