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IRF634N-IRF634NS
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 94310
International
. . IRF634N
TOR Rectifier IRF634NS
o Advanced Process Technology IRF634NL
. Dynamic dv/dt Rating HEXFET® Power MOSFET
0 175°C Operating Temperature
. Fast Switching D =
. Fully Avalanche Rated VDSS 250V
o Ease of Paralleling -
0 Simple Drive Requirements G rn, RDS(on) - 04359
Description
FifthGenerationHEXFET®PowerMOSFETsfromInternational ID = 8.0A
Rectirer utilize advanced processing techniques to achieve s
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known tor,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred forall commercial-
industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low ' = ,
package cost of the TO-220 contribute to its wide acceptance 3 '. "i1iliff7"- '
N' b" l
throughout the industry. \ l
The D2Pak is a surface mount power package capable of . l ,
accommodating die sizes up to HEX-4. It provides the highest ’
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high TO-220AB D2Pak TO-262
current applications because of its low internal connection IRF634N IRF634NS IRF634NL
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF634NL) is available for low-
profile application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.0
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 5.6 A
IDM Pulsed Drain Current C) 32
Pro @Tc = 25°C Power Dissipation 88 W
Po @TA = 25°C Power DissipationS 3.8
Linear Derating Factor 0.59 Wl°C
I/ss Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy© 110 mJ
IAR Avalanche Current(0 4.8 A
EAR Repetitive Avalanche EnergyCD 8.8 mJ
dv/dt Peak Diode Recovery dv/dt 7.3 V/ns
Tu Operating Junction and -55 to +175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew© 10 Ibf-in (1 .1N-m)
1
9/10/01
IRF634N/S/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 250 - - V VGS = 0V, ID = 250PA
AV(BR}DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.33 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.435 Q VGS = 10V, ID = 4.8A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = I/cs, ID = 250pA
gts Forward Transconductance 5.4 - - S Vos = 50V, ID = 4.8A ©
loss Drain-to-Source Leakage Current - - 25 pA Vos = 250V, VGS = 0V
- - 250 VDs = 200V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
% Total Gate Charge - - 34 ID = 4.8A
Qgs Gate-to-Source Charge - - 6.5 nC VDS = 200V
di Gate-to-Drain ("Miller") Charge - - 16 VGS = 10V, See Fig. 6 and 13
tam) Turn-On Delay Time - 8.4 - Vroro = 125V
t, Rise Time - 16 - ID = 4.8A
tuiott) Turn-Off Delay Time - 28 - ns Rs = 1.39
tf Fall Time - 15 - Veg = 10V, See Fig. 10 ©
. Between lead, D
u, Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 620 - VGS = 0V
Coss Output Capacitance - 84 - VDs = 25V
Crss Reverse Transfer Capacitance - 23 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 8.0 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)(D - - 32 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 4.8A, VGS = 0V ©
trr Reverse Recovery Time - 130 200 ns TJ = 25°C, IF = 4.8A
Qrr Reverse Recovery Charge - 650 980 nC di/dt = 100Alps ©
ton Fon/vard Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1.7
Recs Case-to-Sink, Flat, Greased Surface 6) 0.50 - ''C/W
RSJA Junction-to-Ambient) - 62
RNA Junction-to-Ambient (PCB mount)S - 40
2
