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IRF640PBF
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
1:212 Rectifier
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
o Repetitive Avalanche Rated
o FastSwitching
0 Ease of Parall
o Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the T0220 contribute to its wide
acceptance throug
PD-9.374G
IRF640
Vnss = 200V '
RDS(on) Tr. 0'189
Itojzz18A
cost-effectiveness.
hout the industry.
TCy-i/iii,
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 18 '
ID © To = 100°C Continuous Drain Current, l/ss © 10 V 11 A
IDM Pulsed Drain Current (i) 72 _
Po © Tc = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 T WPC
's/ss Gate-to-Source Voltage I-20 V
EAs Single Pulse Avalanche Energy © 580 mJ
lAFl Avalanche Current (I) 18 A
EAR Repetitive Avalanche Energy co 13 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to +150
Tsre Storage Temperature Range oC)
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf.in (1 A N.m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Ram Junction-to-Case - - _ 1 .0
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Ram Junction-to-Ambient - - 62
IRF640
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
Virm)rss Drain-to-Source Breakdown Voltage 200 - u', V Vss=0V, ID: 25thsA
AV(BR)toss/ATO Breakdown Voltage Temp. Coefficient - 0.29 - VPC Reference to 25°C, In: 1mA
Fluswn) Static Drain-to-Source On-Resistance - - 0.18 n VGs=1OV, |o=11A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250pA
gis Forward Transconductance 6.7 - - S Vos=50V, lo=11A (4)
loss Drain-to-Source Leakage Current - - 25 pA Vrs=200V, I/as-HN
- - 250 Vos=160V, VGS=OV, TJ=125°C
lass Gate-to-Source Forward Leakage - - 100 n A Vss--201/
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
ch Total Gate Charge - - 70 ID=18A
Qgs Gate-to-Source Charge - - 13 no Vns=160V
di Gate-to-Drain ("Miller") Charge - - 39 Ves=10V See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 14 - Von=100V
t, Rise Time - 51 - ns 10:1 8A
tam") Tum-Off Delay Time - 45 - Rtr--9.1n
tr Fall Time - 36 - Flo=5.4s2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - iis3hvrlllli's'i1nd.') D
nH from package iiisi)
Ls Internal Source Inductance - 7.5 -. Ind center 0f
die contact s
Ciss Input Capacitance - 1300 - 1/ss=0V
Cass Output Capacitance n - 430 - pF _ Vos=25V
Crss Reverse Transfer Capacitance - 130 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 18 MOSFET symbol D
(Body Diode) A showing the Ci)
ISM Pulsed Source Current - - 72 integral reverse G (tLl,
(Body Diode) co p-n junction diode. s
l/so Diode Forward Voltage - - 2.0 V TJ=25°C, ls=18A, VGs=0V G)
tn Reverse Recovery Time - 300 610 ns TJ=25°C, IF---18A
Orr Reverse Recovery Charge - 3.4 7.1 wc di/dt=100A/ps C4)
ton Forward Tum-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
6) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=2.7mH
RG--25n, lAs=18A (See Figure 12)
© Isos18A, di/dts150A/us, VDDSV(BR)DSS,
TJS150°C
co Pulse width s 300 us; duty cycle 52%.
