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IRF6603IR ?N/a2200avai30V Single N-Channel HEXFET Power MOSFET in a DirectFET package


IRF6603 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDrain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6604 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assemblyequipment and vapor phase, infra-red or convection soldering techniques. ..
IRF6607 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6607TR1 ,Power MOSFETapplications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6608 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications, PCB assembly equipment and vapor phase, infra-red or convectionsoldering techniques, ..
IRF6609 ,20V Single N-Channel HEXFET Power MOSFET in a DirectFET package IRF6609HEXFET Power MOSFETV R maxQgDSS DS(on) Low Conduction Losses20V 2.0mΩ@V = 10V ..
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IRF6603
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package
PD - 94364E
International IRF6603
TOR Rectifier HEXFET® Power MOSFET
. Application Specific MOSFETs Voss Riosion) max Ctg(typ.)
. Ideal for CPU Core DC-DC Converters 30V 3.4mQ@Vss = 10V 48nC
. Low Conduction Losses 5.5mQ@Vss = 4.5V
. High Cdv/dt Immunity
q Low Profile (0 Dual Sided Cooling Compatible D D
0 Compatible with existing Surface Mount s
Techniques MT DirectFET"' ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
ISQISXISTI IMQIMXIII I I I l
Description
The IRF6603 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm prone. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6603 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6603 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced tum on immunity. The IRF6603 offers particularly low Rds(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage +201-1 2
ID @ TC = 25°C Continuous Drain Current, Vss @ 10V 92
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 27 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 22
lr)M Pulsed Dram Current LO 200
PD @TA = 25°C Power DISSIpation s 3.6
Pro @TA = 70°C Power DiSSipation s 2.3 W
Pro @Tc = 25°C Power Dissipation 42
Linear Derating Factor 0.029 W/°C
TJ Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Thermal Res stance
Parameter
RMPCB Junction-to-PCB Mounted
Notes C) through are on page 11

4/8/04
IRF6603 International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 30 - - V N/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coemcient - 28 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.4 3.4 mn VGS = 10V, ID = 25A ©
- 3.9 5.5 Vss = 4.5V, ID = 20A ©
Vesun) Gate Threshold Voltage 1.4 - 2.5 V Vos = VGS, ID = 250pA
AvesumlATJ Gate Threshold Voltage Coetrtcient - -6.3 - mN//c'C
loss Drain-to-Source Leakage Current - - 30 pA Vos = 24V, VGS = 0V
- - 50 pA Vos = 30V, VGS = 0V
- - 100 Vos = 24V, I/ss = 0V, T: = 70°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -12V
gfs Forward Transconductance 56 - - S Vos = 15V, ID = 20A
Q, Total Gate Charge - 48 72
0951 Pre-Vth Gate-to-Source Charge - 15.6 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 5.2 - nC Vss = 4.5V
di Gate-to-Drain Charge - 16.1 - ID = 20A
ngdr Gate Charge Overdrive - 11.1 - See Fig. 16
st Switch Charge (Q952 + di) _ 21.3 _
Qoss Output Charge - 28 - nC Vos = 16V, I/ss = OV
Re Gate Resistance - 1.0 2.0 Q
tum) Turn-On Delay Time - 20 - Va, = 15V, Ves = 4.5V ©
t, Rise Time - 9.9 - ID = 20A
tam, Turn-Off Delay Time - 24 - ns Clamped Inductive Load
t, Fall Time - 71 -
Ciss Input Capacitance - 6590 - Vss = 0V
Cass Output Capacitance - 1250 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 520 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
EAS ng se 49
IAR u 20
EAR 4.1
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 25 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 200 integral reverse 6
(Body Diode) CD p-n function diode. S
Vso Diode Forward Voltage - 1.0 1.3 V TJ = 25°C, Is = 20A, VGS = 0V ©
t, Reverse Recovery Time - 45 68 ns T J = 25°C, IF = 20A
er Reverse Recovery Charge - 60 90 nC di/dt = 100/Ups ©
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