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IRF6614IRN/a708avaiDirectFET Power MOSFET


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IRF6614
DirectFET Power MOSFET
international IRFg-BQSTOZ
TOR Rectifier
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
0 Application Specific MOSFETs V V R R
0 Lead and Bromide Free co DSS GS DS(on) DS(on)
0 Low Profile (<0.7 mm) 40V max t20V max 5.9mQ© 10V 7.1mS2@ 4.5V
0 Dual Sided Cooling Compatible co 09 tot di Qg52 Qrr Qoss Vgs(th)
© Ultra Low Package lnductance 19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V
0 Optimized for High Frequency Switching above 1MHz co
0 Ideal for CPU Core and Telecom Synchronous
Rectification in DC-DC Converters l s I
0 Optimized for Control FET socket of Sync. Buck ConverterCD 4iii)i
o Low Conduction Losses
0 Compatible with existing Surface Mount Techniques co
ST DirectFETm ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
SQ SX (gi MO MX MT
Description
The IRF6614 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MlCRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, intra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal
resistance by 80%.
The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera-
tion of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous
buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 40 V
Vss Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, Vss © 10V © 12.7
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V © 10.1 A
ID @ To = 25°C Continuous Drain Current, l/ss © 10V 0) 55
IBM Pulsed Drain Current © 102
EAS Single Pulse Avalanche Energy © 22 md
IAR Avalanche Current © 10.2 A
20 . '.i] 12 l l l
"di" I S 10 VDS: 20V /'''"
E 16 E
j; > 8 /
.8, l 8 /7
8 12 TT-- 125oC" g 6 I
tr I, "ss-ms.... J - , ///
E """""'ai------ E; 4 f
.2 o -
g 8 '_........... T J = 25 C 8 r---"
r- .. 2
2.0 4.0 6.0 8.0 10.0 0 10 20 30 40 50
Yas, Gate-to-Source Voltage (V) QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. CO Starting Tu = 25°C, L = 0.43mH, Rs = 259, IAS = 10.2A.
CD Click on this section to link to the DirectFET MOSFETs © Surface mounted on 1 in. square Cu board, steady state.
© Repetitive rating; pulse width limited by max. junction temperature. © Tc measured with thermocouple mounted to top (Drain) of part.
1
1 1/8/04
IRF6614 International
IEZR Rectifier
Static tii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 40 - - V l/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 38 - mV/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 5.9 8.3 m9 I/ss = 10V, ID = 12.7A s
- 7.1 9.9 l/ss = 4.5V, ID =10.2A S
Vesoh) Gate Threshold Voltage 1.35 1.80 2.25 V Vros = I/ss, ID = 250pA
AVGSM/ATJ Gate Threshold Voltage Coefficient - -5.5 - mV/°C
IDSS Drain-to-Source Leakage Current - - 1.0 pA Vos = 32V, Ves = 0V
- - 150 l/ross = 32V, Vss = 0V, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 71 - - S Vros = 10V, ID = 10.2A
q, Total Gate Charge - 19 29
0951 Pre-Vth Gate-to-Source Charge - 5.9 - VDS = 20V
0952 Post-Vth Gate-to-Source Charge - 1.4 - nC Vss = 4.5V
di Gate-to-Drain Charge - 6.0 - ID = 10.2A
ngd, Gate Charge Overdrive - 5.7 - See Fig. 17
st Switch Charge (Q952 + di) - 7.4 -
Qoss Output Charge - 9.5 - nC VDS = 16V, I/ss = 0V
Re Gate Resistance - 1.0 1.5 Q
tum) Turn-On Delay Time - 13 - vDD = 20V, I/ss = 4.5V S
t, Rise Time - 27 - ID = 10.2A
td(ott) Turn-Off Delay Time - 18 - ns Clamped Inductive Load
t, Fall Time - 3.6 -
Ciss Input Capacitance - 2560 - Ves = 0V
Coss Output Capacitance - 370 - pF VDS = 20V
Crss Reverse Transfer Capacitance - 200 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.6 MOSFET symbol C)
(Body Diode) A showing the It
ISM Pulsed Source Current - - 102 integral reverse G (rd,
(Body Diode) © p-n junction diode. fl
Va, Diode Forward Voltage - - 1.0 V T., = 25°C, ls = 10.2A, Veg = 0V s
trr Reverse Recovery Time - 15 23 ns To = 25°C, IF = 10.2A
Qrr Reverse Recovery Charge - 5.5 8.3 no di/dt = 100A/ps s
Notes:
© Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
2
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