IRF6618 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDrain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6618TR1 ,30V Single N-Channel HEXFET Power MOSFET in a DirectFET packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDrain-to-Source Voltage 30 VDSV Gate-to-S ..
IRF6618TR1PBF ,A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques. ..
IRF6618TRPBF , DirectFET®Power MOSFET ®
IRF6619 ,DirectFET Power MOSFETapplications.Absolute Maximum RatingsParameter Max. UnitsV 20Drain-to-Source Voltage VDS ±20V Gate- ..
IRF6619TR1PBF ,A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes.applications.Absolute Maximum RatingsMax.Parameter Units20V Drain-to-Source Voltage VDS ±20V Gate-t ..
IS63LV1024L-12KI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12T , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12T , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-12TI , 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63WV1024BLL-12JLI , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64C1024AL-15KA3 , 128K x 8 HIGH-SPEED CMOS STATIC RAM
IRF6618-IRF6618TR1
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package
PD - 94726H
|RF6618/IRF6618TR1
HEXFET© Power MOSFET
International
ISER Rectifier
. . . . Voss RDS(on) max 09
o RoHS compliant containing no lead or bromide
q Application Specific MOSFETs 30V 2.2mf2@Vss = 10V 43 nC
q Ideal for CPU Core DC-DC Converters 3.4mQ©Vas = 4.5V
q Low Conduction Losses
q Low Switching Losses
0 Low Profile (<0.7 mm) s /;“--. l
q Dual Sided Cooling Compatible I 4iii)i 1 ex”
q Compatible with existing Surface Mount D s D (i')',)'"'"
Techniques
MT DirectFETm ISOMETRIC
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ SX ST MQ MX
Description
The IRF6618 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t20
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 170
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 30 A
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 24
IDM Pulsed Dram Current Q) 240
Pro @TA = 25°C Power Dissipation G) 2.8
PD @TA = 70°C Power Dissipation Q) 1.8 W
PD @TC = 25°C Power Dissipation 89
Linear Derating Factor 0.022 W/°C
TJ Operating Junction and -40 to + 150 °C
TSTG Storage Temperature Range
Avalanche Characteristics
Parameter Typ. Max. Units
E AS Single Pulse Avalanche Energy© - 210 mJ
[AR Avalanche Current C) - 24 A
Thermal Resistance
Parameter
on- o-
on- O-
on- o-
u on- e
Junction-to-PCB Mounted
Notes co through are on page 9
11/16/05
lRF66j8/llRF6618TR1
International
1:0.R Rectifier
Static (g) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, b = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 23 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 1.7 2.2 mn I/ss = 10V, ID = 30A ©
- - 3.4 I/ss = 4.5V, ID = 24A (3
Vsam) Gate Threshold Voltage 1.35 1.64 2.35 v Vos = l/ss, ID = 250PA
AVGS
- - 5.0 Vos = 30V, l/ss = 0V
lass Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vss = 0V
- - 150 I/os = 24V, l/ss = OV, T J = 150°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 100 - - S Vos = 15V, ID = 24A
Qg Total Gate Charge - 43 65
0951 Pre-Vth Gate-to-Source Charge - 12 - I/os = 15V
Qgs2 Post-Vth Gate-to-Source Charge - 4.0 - nC l/ss = 4.5V
qu Gate-to-Drain Charge - 15 23 ID = 24A
ngdr Gate Charge Overdrive - 12 - See Fig. 16
st Switch Charge (0952 + di) - 19 -
Qoss Output Charge - 28 - nC I/os = 15V, l/ss = ov
Re Gate Resistance - 1.0 2.2 Q
td(on) Turn-On Delay Time - 21 - Vor, = 15V, l/ss = 4.5V 6)
t, Rise Time - 71 - ID = 24A
tum) Turn-Off Delay Time - 27 - ns Clamped Inductive Load
t, Fall Time - 8.1 -
Ciss Input Capacitance - 5640 - l/ss = 0V
Coss Output Capacitance - 1260 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 570 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 89 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 240 integral reverse G
(Body Diode) co p-n junction diode. S
VsD Diode Forward Voltage - 0.78 1.2 v T J = 25°C, IS = 24A, l/ss = ov ©
t,, Reverse Recovery Time - 43 65 ns T J = 25°C, IF = 24A
er Reverse Recovery Charge - 46 69 n0 di/dt = 100A/ps ©
2
