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IRF6644IRN/a66avaiDirectFETPower MOSFET


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IRF6644
DirectFETPower MOSFET
International IRFPg-éezo:
TOR Rectifier
DirectFETTM Power MOSFET C2)
Typical values (unless otherwise specified)
o Lead and Bromide Free C) Voss Vas RDS(on)
q Low Profile (<0.7 mm)
q Dual Sided Cooling Compatible C) 100V max t20V max 10.7mQ© 10V
q Ultra Low Package Inductance tag tot di vgs(th)
0 Optimized for High Frequency Switching C) 35nC 11.5nC 3.7V
o Ideal for High Performance Isolated Converter
Primary Switch Socket
o Optimized for Synchronous Rectification f"7sc,:ir-]
0 Low Conduction Losses 4iiijl
q Compatible with existing Surface MountTechniques co
DirectFET“ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISQISXISTI IMalMxlMTIml I ll
Description
The IRF6644 combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFET"rM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 100 V
Vos Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, Vss © 10V © 10.3
ID © TA = 70°C Continuous Drain Current, Ves © 10V © 8.3 A
ID @ TC = 25°C Continuous Drain Current, l/ss @ 10V © 60
IBM Pulsed Drain Current s 82
EAS Single Pulse Avalanche Energy © 220 md
IAR Avalanche Current S 6.2 A
0.12 .
A ID = 6.2A A
"iz,'] 0.08 "iz,'"
g 0.04 T,'
CL T = 125°C '5
r'-'" Mr-..-, J l s'-"
"TJ = 25°C
0.00 I
4.0 6.0 8.0 10.0 12.0 14.0 16.0 0 4 8 12 16 20
VGS, Gate-to-Source Voltage (V) ID, Drain Current (A)
Fig l. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical On-Resistance Vs. Drain Current
Notes:
OD Click on this section to link to the appropriate technical paper. © Tc measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. s Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 12mH, Re = 259, MS = 6.2A.
1
1 1/23/04
IRF6644
Static © Tu = 25°C (unless otherwise specified)
International
122R Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250pA
ABVDSSIATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, ID = 1mA
RDSion) Static Drain-to-Source On-Resistance - 10.7 13 m9 Vas = 10V, ID = 10.3A co
VGS(th) Gate Threshold Voltage 2.8 - 4.8 V Vos = Ves: ID = 150PA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -10 - mV/°C
loss Drain-to-Source Leakage Current - - 20 PA Vos = 100V, Vas = 0V
- - 250 Vos = 80V, Vas = OV, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
gfs Forward Transconductance 15 - - S Vos = 10V, ID = 6.2A
q, Total Gate Charge - 35 47
0951 Pre-Vth Gate-to-Source Charge - 8.0 - Vos = 50V
0952 Post-Vth Gate-to-Source Charge - 1.6 - nC Vas = 10V
di Gate-to-Drain Charge - 11.5 17.3 ID = 6.2A
ngd, Gate Charge Overdrive - 13 - See Fig. 17
QSW Switch Charge (0952 + di) - 13.1 -
Qoss Output Charge - 17 - nC Vos = 16V, Vas = 0V
Rs Gate Resistance - 1.0 2.0 Q
tam) Turn-On Delay Time - 17 - VDD = 50V, Vas = 10V OD
tr Rise Time - 26 - ID = 6.2A
ton Turn-Off Delay Time - 34 - ns RG=62Q
t, Fall Time - 16 -
Ciss Input Capacitance - 2210 _ Vas = 0V
Coss Output Capacitance - 420 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz
Coss Output Capacitance - 2120 - Vss = 0V, Vos = 1.0V, f=1.0MHz
Coss Output Capacitance - 240 - Vas = OV, VDS = 80V, f=1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 10 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current - - 82 integral reverse
(Body Diode) © p-n junction diode.
Va, Diode Forward Voltage - - 1.3 V Tu = 25''C, ls = 6.2A, Vss = 0V OD
tr, Reverse Recovery Time - 42 63 ns T, = 25°C, IF = 6.2A, VDD = 50V
0,, Reverse Recovery Charge - 69 100 nC di/dt = 100A/ps OD
Notes:
(D Pulse width S 400ps; duty cycle S 2%.
© Repetitive rating; pulse width limited by max. junction temperature.

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