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IRF6646TR1PBF-IRF6646TRPBF
A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 68 amperes.
PD - 97224A
International IRF6646PbF
TOR Rectifier IRF6646TRPbF
DirectFETTM Power MOSFET ©
o ROHS Compliant co Typical values (unless otherwise specified)
0 Lead-Free (Qualified up to 260°C Reflow) VDSS Vas RDSW"
q Application Specific MOSFETs 80V max A-20V max 7.6mf2@ 10V
q Ideal for High Performance Isolated Converter th, tot di 0952 on Qoss vgs(th)
Primary Switch Socket 36nC 12nC 2.0nC 48nC 18nC 3.8V
0 Optimized for Synchronous Rectification
0 Low Conduction Losses
q High Cdv/dt Immunity
q Low Profile (<0.7mm) G iii5i, S _
q Dual Sided Cooling Compatible OD s l
0 Compatible with existing Surface Mount Techniques co F
DirectFET"' ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISQISXISTI IMalMxlMTlml I ll
Description
The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6646PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(:10%) or 36V to 60V ETSI input
voltage range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced
total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for
system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 80 V
Vos Gate-to-Source Voltage :20
ID © TA = 25°C Continuous Drain Current, Vss @ 10V © 12
ID @ TA = 70°C Continuous Drain Current, Vss © 10V © 9.6 A
lo @ TC = 25°C Continuous Drain Current, Vas @ 10V © 68
IBM Pulsed Drain Current S 96
EAS Single Pulse Avalanche Energy © 230 mJ
IAR Avalanche Current s 7.2 A
0.05 E 12.0
ID = 7.2A 8,
"di" 0.04 g 10.0
"E" > 8.0
fj) 0.03 g
a g 6.0
E 0.02 f,'
g "r' 4.0
>, tif
r- 0.01 o O 2.0
J = 25 a
o go 0.0
4 6 8 10 12 14 16 0 10 20 30 40
VGS Gate -to -Source Voltage (V) Fi 2 . 0G Total Gate Charge (nC)
Fig I. Typical On-Resistance vs. Gate Voltage lg . Typical Total Gate Charge vs. Gate-to-Source
Voltage
Notes:
CO Click on this section to link to the appropriate technical paper. co TC measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting T: = 25°C, L = 8.8mH, Rs = 259, IAS = 7.2A.
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IRF6646PbF International
TOR Rectifier
Static © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 80 - - V Ves = 0V, ID = 250PA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 7.6 9.5 m9 Ves = lov, ID = 12A Cr)
l/sam) Gate Threshold Voltage 3.0 - 4.9 V VDs = Ves. ID = 150uA
AVGSUm/ATJ Gate Threshold Voltage Coefficient - -11 - mV/°C
IDSS Drain-to-Source Leakage Current - - 20 PA l/rs = 80V, Ves = 0V
- - 250 I/os = 64V, Vas = OV, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gfs Forward Transconductance 17 - - S Vos = 10V, ID = 7.2A
q, Total Gate Charge - 36 50
0931 Pre-Vth Gate-to-Source Charge - 7.6 - VDS = 40V
0932 Post-Vth Gate-to-Source Charge - 2.0 - nC l/ss = 10V
di Gate-to-Drain Charge - 12 ID = 7.2A
ngdr Gate Charge Overdrive - 14 - See Fig. 15
st Switch Charge (0952 + di) - 14 -
Qoss Output Charge - 18 - nC Vos = 16V, l/tss = 0V
Re Gate Resistance - 1.0 - Q
td(on) Turn-On Delay Time - 17 - VDD = 40V, l/ss = 10V ©
t, Rise Time - 2O - ID = 7.2A
td(off) Turn-Off Delay Time - 31 - ns RG=629
t, Fall Time - 12 - See Fig. 16 & 17
Ciss Input Capacitance - 2060 - Ves = 0V
Coss Output Capacitance - 480 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz
Cogs Output Capacitance - 2180 - l/ss = 0V, l/cs = 1.0V, f=1.0MHz
Coss Output Capacitance - 310 - Ves = 0V, VDS = 64V, f=1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.5© MOSFET symbol D
(Body Diode) A showing the Cr,
ISM Pulsed Source Current - - 96 integral reverse G E
(Body Diode) s p-n junction diode. R
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C. ls = 7.2A, Vas = 0V co
tr, Reverse Recovery Time - 36 54 ns TJ = 25°C, IF = 7.2A, VDD = 40V
Qrr Reverse Recovery Charge - 48 72 nC di/dt = 100A/ps CD See Fig. 18
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width E 400ps; duty cycle S 2%.
Thermally limited and used Reja to calculate.
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