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IRF6662TRPBF
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes.
PD - 97243A
International IRF6662PbF
Tait, Rectifier IRF6662TRPbF
DirectFETTM Power MOSFET ©
Typical values (unless otherwise specified)
o RoHs Compliant co
o Lead-Free (Qualified up to 260°C Reflow) Voss Vas Rrosion)
q Application Specific MOSFETs 100V max e2UN max 17.5mQ@ 10V
qt Ideal for High Performance Isolated Converter &1 tot 09L thsa on Qoss Aza,
Primary Switch Socket 22nC 6.8nC 1.2nC 50nC 11nC 3.9V
0 Optimized for Synchronous Rectification
a Low Conduction Losses
q High Cdv/dt Immunity
qt Low Profile (<0.7mm) l
q Dual Sided Cooling Compatible co D AFt D
q Compatible with existing Surface Mount Techniques co - -
M2 DirectFET'" ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)OD
lsalsxlsrl IMalMxlMTlii!iigl I ll
Description
The IRF6662PbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6662PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 100 V
vss Gate-to-Source Voltage t20
lo @ TA = 25°C Continuous Drain Current, Vas @ 10V © 8.3
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V © 6.6 A
ID @ To = 25°C Continuous Drain Current, VGS @ 10V © 47
IBM Pulsed Drain Current S 66
EAS Single Pulse Avalanche Energy © 39 md
IAR Avalanche Current S 4.9 A
100 'iii'] 12.0 l I
a 80 iii.' 10.0 .IDi'9A_VDS= " ',,,,w'''''"
LE; g 8 0 V§=I50V\
ste.. 60 g . VDs= 20V)
0:8 Jo 6.0 "
- 4O cl, -
.8 ii 4.0 /
, 20 8 2.0
T J = 25°C a e,/''"
0 go 0.0
4 6 8 10 12 14 16 o 5 10 15 20 25
As Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs.
Gate-to-Source Voltage
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
OD Click on this section to link to the appropriate technical paper. co To measured with thermocouple mounted to top (Drain) of part.
© Click on this section to link to the DirectFET Website. © Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 3.2mH, Rs = 25Q, MS = 4.9A.
1
08/25/06
http:l/www.lo_q.com/
IRF6662PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 100 - - V I/ss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.10 - V/°C Reference to 25°C, b = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 17.5 22 m9 Ves = 10V, ID = 8.2A ©
Vegan) Gate Threshold Voltage 3.0 3.9 4.9 V VDS = Vas, ID = 100pA
AI/sam/NL Gate Threshold Voltage Coefficient - -9.7 - mV/°C
IDss Drain-to-Source Leakage Current - - 20 PA l/rss = 100V, Ves = 0V
- - 250 I/cs = 80V, I/ss = OV, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gfs Forward Transconductance 11 - - S VDS = 10V, '0 = 4.9A
q, Total Gate Charge - 22 31
0931 Pre-Vth Gate-to-Source Charge - 4.9 - Vos = 50V
0952 Post-Vth Gate-to-Source Charge --.-. 1.2 nC VGs = 10V
di Gate-to-Drain Charge - 6.8 10 ID = 4.9A
Qgodr Gate Charge Overdrive - 9.1 - See Fig. 15
st Switch Charge (0952 + di) - 8.0 -
QOSS Output Charge - 11 - nC VDS = 16V, l/ss = 0V
Rs Gate Resistance - 1.2 - Q
tdwn) Turn-On Delay Time - 11 - VDD = 50V, l/ss = 10V ©
t, Rise Time - 7.5 - ID = 4.9A
tron Turn-Off Delay Time - 24 - ns RG=6-2-Q
t, Fall Time - 5.9 - See Fig. 17
Ciss Input Capacitance - 1360 - Ves = 0V
Cass Output Capacitance - 270 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 61 - f = 1.0MHz
Coss Output Capacitance - 1340 - Vss = 0V, VDS = 1.0V, f=1.0MHZ
Coss Output Capacitance - 160 --. VGs = 0V, Vos = 80V, f=1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.5 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 66 integral reverse
(Body Diode) © p-n junction diode. S
Va, Diode Forward Voltage - - 1.3 V To = 25°C, ls = 4.9A, l/ss = 0V C)
trr Reverse Recovery Time - 34 51 ns Tu = 25°C, IF = 4.9A, VDD = 50V
Qrr Reverse Recovery Charge - 50 75 nC di/dt = 100A/ps CD See Fig. 18
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width 3 400ps; duty cycle 3 2%.
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