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IRF6665
DIGITAL AUDIO MOSFET
PD - 96900
International
TOR Rectifi er DIGITAL AUDIO MOSFET I R F6665
Features Key Parameters
. Latest MOSFET Silicon technology Vos 100 V
. Key parameters optimized for CIass-D audio amplifier applications RDS(on) typ. @ Vas = 10V 53 mf2
. Low RDs(on) for improved efficiency q, typ. 8.7 nC
. Low % for better THD and improved efficiency Ream) typ. 1 .9 Q
. Low Qrr for better THD and lower EMI
. Low package stray inductance for reduced ringing and lower EMI
. Can deliver up to 100W per channel into 89 with no heatsink ©
. Dual sided cooling compatible
q Compatible with existing surface mount technologies
. Lead and Bromide Free
SH DirectFET“ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
IsalsxlsTlgNlMalMxlMTlMrol ll
Description
This Digital Audio MOSFET is specifically designed for CIass-D audio amplifier applications. This MOSFET utilizes the latest processing
techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate
resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and
resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage
ringing that accompanies fast current transients. The DirectFET TM package is compatible with existing layout geometries used in power
applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing method and processes. The DirectFET TM package also allows dual sided cooling to maximize thermal
transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFETa highly efficient,
robust and reliable device for CIass-D audio amplifier applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 100 V
Vas Gate-to-Source Voltage i 20
ID @ Tc = 25°C Continuous Drain Current, l/ss © 10V 19
ID © TA = 25°C Continuous Drain Current, l/ss @ 10V 4.2 A
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V 3.4
IDM Pulsed Drain Current C) 34
PD @TC = 25°C Maximum Power Dissipation 42 W
PD @TA = 25°C Power Dissipation © 2.2
PD @TA = 70°C Power Dissipation © 1.4
Linear Derating Factor 0.017 W/°C
To Operating Junction and -40 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJA Junction-to-Ambient ©© --- 58 °C/W
ROJA Junction-to-Ambient ©© 12.5 --
ROJA Junction-to-Ambient ©© 20 -
Rmc Junction-to-Case ©© - 3.0
Rosea, Junction-to-PCB Mounted 1.4 -
Notes C) through & are on page 2
1
10/11/04
IlRF6665
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 100 - - V I/ss = 0V, ID = 250pA
AV(BR,DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 53 62 mn Vss = 10V, ID = 5.0A (ii)
Vesm Gate Threshold Voltage 3.0 --.- 5.0 V VDS = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 PA Vrrs = 100V, Vss = 0V
- - 250 Vos = 80V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
Ream) Internal Gate Resistance - 1.9 2.9 Q
Dynamic © T = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 6.6 - - S Vos = lov, ID = 5.0A
q, Total Gate Charge - 8.7 11.7 Vos = 50V
0951 Pre-Vth Gate-to-Source Charge - 2.1 - Vss = 10V
Ass Post-Vth Gate-to-Source Charge - 0.58 - b = 5.0A
di Gate-to-Drain Charge - 2.8 - nC See Fig.6 and 16
ngd, Gate Charge Overdrive - 3.2 -
st Switch Charge (Qgsz + di) -- 3.38 -
tam”) Turn-On Delay Time -- 7.4 - VDD = 50V
t, Rise Time - 2.8 - ID = 5.OA
td(off) Turn-Off Delay Time - 14 - ns Rs = 6.09
ti Fall Time - 4.3 - Vss =10V Cl)
Ciss Input Capacitance - 530 - Ves = 0V
Cass Output Capacitance _ 110 _ Vos = 25V
Crss Reverse Transfer Capacitance - 29 - pF f = 1.0MHz
Coss Output Capacitance - 510 - Ves = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 67 - Vss = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 130 - N/ss = 0V, Vos = 0V to 80V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 11 mJ
IAR Avalanche Current co - 5.0 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 4.2 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - -- 34 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 5.0A, VGS = 0V ©
trr Reverse Recovery Time - 31 - ns TJ = 25°C, IF = 5.0A, VDD = 25V
Qrr Reverse Recovery Charge - 37 - nC di/dt = 100A/ps ©
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature.
© Starting Tu = 25°C, L = 0.89mH, Rs = 259, IAS = 5.0A.
© Surface mounted on 1 in. square Cu board.
© Pulse width S 400ps; duty cycle S 2%.
(9 Coss eff. is a fixed capacitance that gives the same
charging time as Coss while Vros is rising from 0 to 80% V035.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
Tc measured with thermal couple mounted to top
(Drain) of part.
Re is measured at Tu of approximately 90°C.
Based on testing done using a typical device & evaluation board
at Vbus=t45V, fsw=400KHz, and TA=25°C. The delta case
temperature ATC is 55°C.
