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IRF6691
20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET package
International PD-95867B
TOR Rectifier |RF6691
HEXFETO Power MOSFET plus Schottky Diode
0 Application Specific MOSFETs Voss RDS(on) max Qg(typ.)
o Integrates Monolithic Trench Schottky Diode 20V 2.5mQ©Vss = 4.5V 47nC
. Ideal for CPU Core DC-DC Converters 1.8m§2@VGs = 10V
q Low Conduction Losses
0 Low Reverse Recovery Losses
. Low Switching Losses fa-tii.--,:,-": s
. Low Reverse Recovery Charge and Low Vf G b-L'
. Low Profile (<0.7 mm) s
q Dual Sided Cooling Compatible _ m
I . . . . MT DirectFET ISOMETRIC
q Compatible with existing Surface MountTechniques
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
lsalsxlsrrl IMQIMXII'I I I I
Description
The IRF6691 combines IR's industry leading DirectFET package technology with the latest monolithic die technology,
which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application noteAN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal
resistance by 80%.
The IRF6691 is characterized with reduced on resistance (Rosani reverse recovery charge (Q,,) and source to drain
voltage (V50) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high
Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of proces-
sors operating at higher frequencies. The IRF6691 has been optimized for parameters that are critical for synchronous
MOSFET sockets operating in 12 volt buss converters.
Absolute Maximum Ratings
Parameter Max. Units
Vrss Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage t12
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10V 180
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 32 A
ID © TA = 70°C Continuous Drain Current, Vas @ 10V 26
Ins, Pulsed Drain Current CO 260
PD @TA = 25°C Power Dissipation s 2.8
PD @TA = 70°C Power Dissipation s 1.8 W
PD @Tc = 25°C Power Dissipation 89
Linear Derating Factor 0.022 W/°C
T J Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Fu, Junction-to-Ambient C90) - 45
Fu, Junction-to-Ambient SS12.5 -
ROJA Junction-to-Ambient ©O 20 - ''C/W
ROJC Junction-to-Case COO) _ 1.4
Rosecs Junction-to-PCB Mounted 1.0 --
Notes C) through are on page 10
1
03/09/05
IRF6691
International
TOR Rectifier
Static @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, ID = 1.0mA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 12 - mV/°C Reference to 25°C, ID = 10mA
RDS(on) Static Drain-to-Source On-Resistance - 1.8 2.5 mn Vss = 4.5V, ID = 12A ©
- 1.2 1.8 Vas--10V,lD--15A0)
Vesuh) Gate Threshold Voltage 1.6 - 2.5 V l/rss = Vss, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -4.1 - mV/°C ID = 10mA, reference to 25°C
- - 1.4 mA Vos = 20V, Vas = 0V
loss Drain-to-Source Leakage Current - - 500 PA I/rs = 16V, Vss = 0V
- - 5 mA Vos = 16V, l/ss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 12V
Gate-to-Source Reverse Leakage - - -1OO Vss = -12V
gfs Forward Transconductance 110 - - S Vos = 10V, ID = 26A
Qg Total Gate Charge -- 47 71
0951 Pre-Vth Gate-to-Source Charge - 14 - Vos = 10V
0952 Post-Vth Gate-to-Source Charge -- 4.4 - nC Vss = 4.5V
di Gate-to-Drain Charge - 15 - ID = 17A
ngd, Gate Charge Overdrive - 14 - See Fig. 17
st Switch Charge (0952 + di) _ 19 -
Qoss Output Charge - 30 - nC Vos = 10V, Vas = 0V
Re Gate Resistance - 0.60 1.5 Q
Lion) Turn-On Delay Time -- 23 -- Vor, = 16V, Vss = 4.5V ©
t, Rise Time - 95 - ns lo = 26A
td(off) Turn-Off Delay Time - 25 - Clamped Inductive Load
t, Fall Time _ IO -
Ciss Input Capacitance - 6580 - Vas = 0V
Cass Output Capacitance - 2070 - pF l/ns = 10V
Crss Reverse Transfer Capacitance _ 840 _ f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 230 mJ
lan Avalanche Current CD - 26 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 32 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 260 integral reverse G
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage - - 0.65 v T J = 25°C, IS = 25A, I/tss = OV ©
tn Reverse Recovery Time - 32 48 ns T J = 25°C, Ir = 25A
2, Reverse Recovery Charge - 26 39 n0 di/dt = 100A/ps ©
