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IRF6712STR1PBF-IRF6712STRPBF
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 17 amperes optimized with low on resistance.
International
TOR Rectifier
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o RoHS Compliant and Halogen Free co
0 Low Profile (
q Dual Sided Cooling Compatible C)
DirectFETTM Power MOSFET (7)
Typical values (unless otherwise specified)
q Ultra Low Package Inductance
q Optimized for High Frequency Switching CD
Voss Vas RDS(on) RDS(on)
25V max t201/ max 3.8mQig) 10V 6.7mf2@ 4.5V
A tot di Ass On Qoss Vgs(th)
12nC 4.0nC 1.7nC 14nC 10nC 1.9V
q Ideal for CPU Core DC-DC Converters
q Optimized for both Sync.FET and some Control FET
application0D
0 Low Conduction and Switching Losses
q Compatible with existing Surface MountTechniques (D D D
o 100% Rg tested DirectFETTM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
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Description
The IRF6712SPbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6712SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6712SPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity f)
IRF6712SPbF DirectFET Small Can Tape and Reel 4800 IRF6712STRPbF
Tape and Reel 1000 IRF6712STRIPbF
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V © 17
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V © 13 A
ID @ To = 25°C Continuous Drain Current, Vss @ 10V © 68
IDM Pulsed Drain Current 6) 130
EAS Single Pulse Avalanche Energy © 13 mJ
lAn Avalanche Current s 13 A
iii.] 14.0
g g 10.0
(E, if-,' 8.0
n: U.) 6.0
5' (i'; 4.0
ri-b, T J = 25°C iii
J' 0.0
2345678910111213141516 0 5 10 15 20 25 30 35
VGS, Gate -to -Source Voltage (V) As Total Gate Charge (nC)
Notes: Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
co Click on this section to link to the appropriate technical paper.
© Click on this section to link to the DirectFET Website.
© Surface mounted on 1 in. square Cu board, steady state.
© TC measured with thermocouple mounted to top (Drain) of part.
G) Repetitive rating; pulse width limited by max. junction temperature.
© Starting Tu = 25°C, L = 0.14mH, Rs = 2591|As = 13A.
il © 2013 International Rectifier
June 11,2013
ItCi,iR, IRF6'7128PbF
Static @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 18 - mV/°C Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source On-Resistance - 3.8 4.9 m9 I/ss = 10V, ID = 17A co
- 6.7 8.7 I/ss = 4.5V, ID = 13A C)
Vesah) Gate Threshold Voltage 1.4 1.9 2.4 V I/os = I/as, b = 50pA
AVGSah/ATJ Gate Threshold Voltage Coefficient - -6.1 - mV/°C
IDSS Drain-to-Source Leakage Current - - 1.0 pA VDS = 25V, I/ss = 0V
- - 150 VDS = 25V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 40 - - S Vos = 13V, ID = 13A
Q, Total Gate Charge - 12 18
Qusl Pre-Vth Gate-to-Source Charge - 2.9 - VDS = 13V
0952 Post-Vth Gate-to-Source Charge - 1.7 - nC I/ss = 4.5V
qu Gate-to-Drain Charge - 4.0 - ID = 13A
qud, Gate Charge Overdrive - 3.5 - See Fig. 15
st Switch Charge (0082 + Que) - 5.8 -
Qoss Output Charge - 10 - nC VDs = 16V, I/as = 0V
Rs Gate Resistance - 1.7 3.0 Q
tdwn) Turn-On Delay Time - 11 - VDD = 13V, I/ss = 4.5V C)
tr Rise Time -- 40 - ns ID = 13A
taom Turn-Off Delay Time - 14 - Rs = 1.89
t, Fall Time - 12 - See Fig. 17
cu, Input Capacitance - 1570 - l/ss = 0V
Coss Output Capacitance - 490 - pF Vos = 13V
Crss Reverse Transfer Capacitance - 210 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - -- 45 MOSFET symbol C)
(Body Diode) A showing the H]:
G, Pulsed Source Current - - 130 integral reverse G ld,
(Body Diode) G) p-n junction diode. q
VSD Diode Forward Voltage - 0.81 1.0 V TJ = 25°C, ls = 13A, Ves = 0V ©
trr Reverse Recovery Time - 17 26 ns T, = 25°C, IF = 13A
Q,, Reverse Recovery Charge - 14 21 nC di/dt = 200A/ps ©
Notes:
CO Pulse width S 400ps; duty cycle S 2%.
© 2013 International Rectifier June 11, 2013
