IRF6715MTRPBF ,A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance.applications.Absolute Maximum RatingsParameter Max. UnitsV 25DS Drain-to-Source VoltageVV Gate-to-S ..
IRF6716MTR1PBF ,A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance.applications.Absolute Maximum RatingsParameter Max. UnitsV 25Drain-to-Source Voltage VDS ±20V Gate- ..
IRF6717MTRPBF ,A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance.applications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 25 VDSV Gate-to-S ..
IRF6718L2TR1PBF ,A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance.applications.Absolute Maximum RatingsMax.Parameter UnitsV Drain-to-Source Voltage 25 VDS ±20V Gate- ..
IRF6718L2TRPBF , DirectFET Power MOSFET
IRF6721STRPBF ,A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance.applications, PCB assembly equipment and vapor phase, infra-red or convectionsoldering techniques, ..
IS82C59A-12 ,CMOS Priority Interrupt ControllerFeatures Description• 12.5MHz, 8MHz and 5MHz Versions Available The Intersil 82C59A is a high perfo ..
IS82C59A-12X96 , CMOS Priority Interrupt Controller
IS82C82 ,CMOS Octal Latching Bus Driver82C82CMOS Octal Latching Bus DriverMarch 1997
IS82C82 ,CMOS Octal Latching Bus Driver82C82CMOS Octal Latching Bus DriverMarch 1997
IS82C84A ,CMOS Clock Generator Driver
IS82C85 ,CMOS Static Clock Controller/GeneratorFeatures Description• Generates the System Clock For CMOS or NMOS The Intersil 82C85 Static CMOS Cl ..
IRF6715MTRPBF
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance.
PD-96117C
International IRF6715MPbF
TOR Rectifier IRF6715W%PbF
DirectFETTM Power MOSFET Q)
T ical values unless otherwises ecified
o RoHs Compliant and Halogen FreeC) " f p l
q Low Profile (<0.6 mm) Voss Vtss RN“) RN”)
q Dual Sided Cooling Compatible C) 25V max t20V max 1.3mf2© 10V 2.1mf2@ 4.5V
q Ultra Low Package Inductance 09 tot di 0952 On Qoss vgs(th)
0 Optimized for High Frequency Switching C) 40nC 12.0nC 5.3nC 37nC 26nC 1.9V
0 Ideal for CPU Core DC-DC Converters
q Optimized for Sync. FET socket of Sync. Buck ConverterO
q Low Conduction and Switching Losses
q Compatible with existing Surface Mount Techniques C)
o 100% Rg tested
MX DirectFETm ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)CO
ISQISXISTI IMQIIIEEIMTIMPI ll
Description
The IRF6715MPbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6715MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6715MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6715MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage t20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V © 34
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V © 27 A
ID @ To = 25°C Continuous Drain Current, Vss @ 10V © 180
IDM Pulsed Drain Current s 270
EAs Single Pulse Avalanche Energy © 200 mJ
IAR Avalanche Current co 27 A
4 . . iii.". 14.0
Er ID = 34A 'l) 12.0
g 3 , 10.0
s.. ( B 8.0
(n 2 g
f "s, T J = 125°C T 6.0
a "ss 5.3
.3 1 's..,. - Sl 4.0
13 T J = 25°C -. el 2.0
I I cn
0 go 0.0
2 4 6 8 10 12 14 16 18 20 o 20 40 60 80 100 120
VGS, Gate -to -Source Voltage (V) As Total Gate Charge (nC)
N t Fig I. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper. B) Tc measured with thermocouple mounted totop (Drain) of part.
© Click on this section to link to the DirectFET Website. S Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.56mH, Rs = 25f2, 'As = 27A.
1
02/16/11
Downloaded from: http://www.datasheetcata|o_q.com/
lRF6715MPbF International
TOR iiectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 17 - mV/°C Reference to 25°C, lo = 1mA
Roswn) Static Drain-to-Source On-Resistance - 1.3 1.6 mo Vas = 10V, '0 = 34A ©
- 2.1 2.7 I/ss = 4.5V, ID = 27A C)
VGSOh) Gate Threshold Voltage . . 1.4 1.9 2.4 V Vos = Vss, ID = 100PA
AI/asm/NL Gate Threshold Voltage Coefficient - -6.2 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 20V, Vss = 0V
- _ 150 l/os = 20V, Vas = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 135 - - S Vos = 13V, b = 27A
q, Total Gate Charge - 40 59
Qgs1 Pre-Vth Gate-to-Source Charge - 12 - Vos = 13V
0952 Post-l/th Gate-to-Source Charge - 5.3 - nC VGs = 4.5V
di Gate-to-Drain Charge - 12 - ID = 27A
ngd, Gate Charge Overdrive - 11 - See Fig. 15
st Switch Charge (Q952 + di) - 17 -
Qoss Output Charge - 26 - nC Vos = 16V, Vss = 0V
Rs Gate Resistance - 1.1 2.0 Q
tom Turn-On Delay Time - 20 - VDD = 13V, Vas = 4.5V ©
t, Rise Time - 31 - ns ID = 27A
ton Turn-Off Delay Time - 16 - Re = 1.89
ti Fall Time - 12 - See Fig. 17
Ciss Input Capacitance - 5340 - l/ss = 0V
Cass Output Capacitance - 1280 - pF Vos = 13V
Crss Reverse Transfer Capacitance - 600 - f = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 98 MOSFET symbol D
(Body Diode) A showing the L,t
ISM Pulsed Source Current - _ 270 integral reverse G E
(Body Diode) © p-n junction diode. cl
Va, Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 27A, Ves = 0V ©
t,, Reverse Recovery Time - 28 42 ns Tu = 25°C, ' = 27A
0,, Reverse Recovery Charge - 37 56 nC di/dt = 200A/ps ©
Notes:
CO Pulse width f 400ps; duty cycle S 2%
2
Downloaded from: http://www.datasheetcata|o_q.com/
