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IRF6717MTRPBF
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance.
PD - 97345C
International IFlF6717MPbF
TOR Rectifier lRF6717MTRPbF
DirectFETTM Power MOSFET Q)
T ical values unless otherwise s ecified
o RoHs Compliant and Halgen Free C) yp ( p )
q Low Profile (<0.7 mm) Voss Vas RDS(0n) RDS(On)
0 Dual Sided Cooling Compatible co 25V max :2OV max 0.95mS2@ 10V 1.6mS2@ 4.5V
q Ultra Low Package Inductance th, tot di Ass on ths, Vgs(th)
0 Optimized for High Frequency Switching C) 46nC 14nC 6.6nC 31nC 35nC 1.8V
0 Ideal for CPU Core DC-DC Converters
q Optimized for Sync. FET socket of Sync. Buck ConverterC)
q Low Conduction and Switching Losses
0 Compatible with existing Surface MountTechniques co
o100% Rg tested
DirectFETTM ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)]
ISOISXISTI IMQIIEBIMTIMPI I I
Description
The IRF6717MPbF combines the latest HEXFET© Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6717MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6717MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6717MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage :20
ID @ TA = 25°C Continuous Drain Current, l/ss © 10V © 38
ID @ T, = 70°C Continuous Drain Current, Vss © 10V © 30 A
ID @ To = 25°C Continuous Drain Current, Vss © 10V © 220
IDM Pulsed Drain Current © 300
EAS Single Pulse Avalanche Energy © 290 m]
IAR Avalanche Current © 30 A
6 ":jiS" 14.0
I = 30A
6: 5 D (ii: 12.0
g: 4 g 10.0
8 2 8.0
(n 3 g
n U.) 6.0
.53 2 d, 4.0
- 1 tO 2.0
J = 25°C do
0 J 0.0
2 4 6 8 IO 12 14 16 18 20 0 20 40 60 80 100 120
VGS, Gate -to -Source Voltage (V) QG Total Gate Charge (nC)
Notes: Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
OD Click on this section to link to the appropriate technical paper. B) Tc measured with thermocouple mounted totop (Drain) of part.
© Click on this section to link to the DirectFET Website. S Repetitive rating; pulse width limited by max. junction temperature.
© Surface mounted on 1 in. square Cu board, steady state. © Starting TJ = 25°C, L = 0.64mH, Re = 259, lAs = 30A.
1
06/01/12
IRF671
International
TOR iiectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 25 - - V Vas = 0V, ID = 250pA
ABI/oss/AT, Breakdown Voltage Temp. Coefficient - 18 - mV/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 0.95 1.25 mo VGs = 10V, ID = 38A C)
- 1.6 2.1 Vas = 4.5V, lo = 30A ©
VGsah) Gate Threshold Voltage 1.35 1.8 2.35 v VDs = Ves, ID = 150PA
AVGSUh/ATJ Gate Threshold Voltage Coefficient - -6.7 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 20V, Vss = 0V
- - 150 I/rss = 20v, Vas = OV, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 140 - - S Vos = 13V, In =30A
tug Total Gate Charge - 46 69
0951 Pre-Vth Gate-to-Source Charge - 14 - Vos = 13V
0952 Post-Vth Gate-to-Source Charge - 6.6 - nC Vss = 4.5V
di Gate-to-Drain Charge - 14 - ID = 30A
ngd, Gate Charge Overdrive - 11 - See Fig. 15
st Switch Charge (Qgsz + di) - 20.6 -
Qoss Output Charge - 35 - nC Vos = 16V, Vas = 0V
Rs Gate Resistance - 1.3 2.2 Q
td(on) Turn-On Delay Time - 25 - VDD = 13V, Vas = 4.5V ©
t, Rise Time - 37 - ID = 30A
tson Turn-Off Delay Time - 19 - ns Re: 1.89
ti Fall Time - 15 -
Ciss Input Capacitance - 6750 - VGS = 0V
Coss Output Capacitance - 1700 - pF VDS = 13V
Crss Reverse Transfer Capacitance - 730 - f = 1.0MHz
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 120 MOSFET symbol D
(Body Diode) A showing the H2:
ISM Pulsed Source Current - - 300 integral reverse G E
(Body Diode) © p-n junction diode. q
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 30A, Vas = 0V C)
trr Reverse Recovery Time - 27 41 ns Tu = 25°C, ' =30A
Qrr Reverse Recovery Charge - 31 47 nC di/dt = 175A/ps C)
Notes:
s Repetitive rating; pulse width limited by max. junction temperature.
Cr) Pulse width 3 400ps; duty cycle 3 2%.
