IRF710 ,2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFETInternational
19R
Rectifier
PD-9.327J
|RF710
HEXFETO Power MOSFET
. Dynamic dv/dt ..
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IRF710
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
hitemaitiqhall
1:212 Rectifier
PD-9.327J
lFlF710
HEXFET6 Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
o FdstSwitching
o Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
s ID = 2.0A
VDSS =.. 400V
RDS(OH) = 3.69
on-resistance and cost-effectiveness'.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
Io @ To = 25°C Continuous Drain Current, Vias @ 10 V 2.0
lo a To = 100°C Continuous Drain Current, Vas © 10 V 1.2 A
IDM Pulsed Drain Current C) 6.0
PD © To = 25°C Power Dissipation 36 W
Linear Derating Factor 0.29 WPC
VGs Gate-to-Source Voltage i:20 V
EAS Single Pulse Avalanche Energy © 120 mJ
IAR Avalanche Current C) 2.0 A
EAR Repetitive Avalanche Energy 6) 3.6 mJ
dv/dt Peak Diode Recovery dv/dt CD 4.0 V/ns
To Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or MS screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
T Parameter Min. Typ. Max. Units
Flax: Junction-to-Case - 3.5
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
Rm Junction-to-Ambient - 62
IRF710
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 400 - - V VGs=0V, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.47 - VPC Reference to 25°C, Io: 1mA
Hosp”) Static Drain-to-Source On-Resistance - - 3.6 n Ves=10V, Io=1.2A C4)
VGS(1h) Gate Threshold Voltage 2.0 - 4.0 V Vos=Vss, lo: 250pA
gis Forward Transconductance 1.0 - - S VDs=50V, ID=1.2A ©
loss Drain-to-Source Leakage Current - - 25 ptA Vre=400V, I/as-HN
- - 250 VDs=320V, 1/as=0V, TJ=12SDC
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 Ntss--2tN
Qg Total Gate Charge - - 17 kr--2.0A
Qgs Gate-to-Source Charge - - 3.4 DC Vos=320V
qu Gate-to-Drain ("Miller") Charge - - 8.5 Ves=10V See Fig. 6 and 13 ©
tum Turn-On Delay Time - 8.0 -r...- Von=200V
tr Rise Time - 9.9 - n s |D=2.0A
tum) Tu rn-Off Delay Time - 21 - Ps--24n
t: Fall Time - 11 - RD=959 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tlvr/J.sti1nd,') D
nH from package iei)
Ls Internal Source Inductance - 7,5 - Ind center 6f
die contact s
Ciss Input Capacitance - 170 - 1/ss=0V
Cogs Output Capacitance - 34 - PF Vos=25V
Cms Reverse Transfer Capacitance - 6.3 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
'Parameter Min. Typ. Max. Units Test Conditions
is Continuous Source Current -- - 2 0 MOSFET symbol D
(Body Diode) . A showing the L,-,-';,
ISM Pulsed Source Current - - 6 0 integral reverse G {:L
(Body Diode) Ci) _ . p-n junction diode. S
Vso Diode Forward Voltage - - 1.6 V TJ=2500, |s=2.0A, I/as-HN CO
trr Reverse Recovery Time - 240 540 ns TJ=25°C, lrr=2.0A
er Reverse Recovery Charge - 0.85 1.6 pC di/dt=100A/ps Co
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=52mH
Re=25(2, lAs=2.0A (See Figure 12)
TJS150°C
© Isos2.0A, di/dt-MOA/ps, VDDSV(BR)DSS,
© Pulse width 5 300 vs; duty cycle 52%.
