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IRF7207IRN/a42553avai-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
IRF7207TRIORN/a186avai-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
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IRF7207TR ,-20V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 91879AIRF7207®HEXFET Power MOSFET Generation 5 TechnologyA1 8S D P-Channel Mosfet2 7 V = -20 ..
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IRF7207-IRF7207TR
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
:raRIectifier
Generation 5 Technology
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Description
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
PD - 91879A
IRF7207
HEXFET© Power MOSFET
s m]: lu, D
s DD 9 7 D VDSS = -20V
I'" 711
s DI] (i D
G DI] 5717 D RDS(on) = 0.069
Top View
powerapplications. VWh these improvements, multiple SO-8
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a
typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -20 V
ID © Tc = 25°C Continuous Drain Current, VGS @ -4.5V -5.4
ID @ Tc = 70°C Continuous Drain Current, Vss @ -4.5V -4.3 A
IDM Pulsed Drain Current OD -43
Pro @Tc = 25°C Power Dissipation 2.5 W
Pro @Tc = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 Wl°C
VGS Gate-to-Source Voltage * 12 V
VGSM Gate-to-Source Voltage Single Pulse tp<10ps -16 V
EAS Single Pulse Avalanche Energy© 140
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Maximum Junction-to-Ambient® - 50 "C/W
1
6/5/00
IRF7207 International
TO.R Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - -0.011 - V/''C Reference to 25°C, lo = -1mA
Roam) Static Drain-to-Source On-Resistance - - O.06 n VGS = -4.5V, ID = -5.4A ©
- - 0.10 VGS = -2.7V, ID = -2.7A ©
VGS(th) Gate Threshold Voltage -0.7 - - V Ws = Kas, ID = -250PA
gts Forward Transconductance 8.3 - - S Ws = -10V, ID = -5.4A
loss Drain-to-Source Leakage Current - - -1.0 pA Ws = -16V, VGS = 0V 0
- - -25 Vos = -16V, VGs = 0V, Tu = 125 C
less Gate-to-Source Forward Leakage - - -100 n A Vss = 12V
Gate-to-Source Reverse Leakage - - 100 l/ss = -12V
% Total Gate Charge - 15 22 ID = -5.4A
Qgs Gate-to-Source Charge - 2.2 3.3 nC VDS = -10V
di Gate-to-Drain ("Miller") Charge - 5.7 8.6 I/cs = -4.5V, ©
td(on) Turn-On Delay Time - 11 - VDD = -10V
tr Rise Time - 24 - ns ID = -1.0A
tum) Turn-Off Delay Time - 43 - Rs = 6.09
k Fall Time - 41 - RD = Ion, ©
Ciss Input Capacitance - 780 - VGS = 0V
Coss Output Capacitance - 410 - pF Vrys = -15V
Crss Reverse Transfer Capacitance - 200 - f = 1.0MHz,
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -3.1 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) co - - -43 p-n junction diode. s
VSD Diode Forward Voltage - - -1.0 V TJ = 25°C, Is = -3.1A, VGs = 0V ©
tn Reverse Recovery Time - 42 63 ns To = 25''C, IF = -3.1A
G, Reverse RecoveryCharge - 50 75 nC di/dt = -100A/ps ©
Notes:
(O Repeti.tive .ratin.g; pulse width limited by © ISD S -5.4A, di/dt S -79/Vps, Vol) 3 V(BR)DSS:
max. junction temperature. T J 5 150°C
© Starting To = 25°C, L = 9.6mH © Pulse width 3 300ps; duty cycle 3 2%.
Rs = 259, IAS = -5.4A.
S When mounted on 1 inch square copper board, t<10 sec
2
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