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IRF7220-IRF7220TR
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD- 91850C
IRF7220
HEXFET© Power MOSFET
International
TOR Rectifier
0 Ultra Low On-Resistance
o P-Channel MOSFET s D11 In, D
. Surface Mount s E2 H 7 D VDSS = -14V
0 Available in Tape & Reel 3 tf SE
S DI D
G D14 SIDD RDS(on) = 0.0129
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely eNcient device for
use in battery and load management applications.
The SO-8 has been modified through a customized -s ", ,
leadframe for enhanced thermal characteristics and <0” I
multiple-die capability making it ideal in a variety of power J
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase, SO-8
infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -14 V
ID @ TA = 25''C Continuous Drain Current, VGS @ -4.51/ tll
ID @ TA-- 70°C Continuous Drain Current, l/cs @ -4.5V 18.8 A
IDM Pulsed Drain Current OD 188
Pro @TA = 25°C Power Dissipation 2.5 W
Pro @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
EAS Single Pulse Avalanche Energy© 110 mJ
Vss Gate-to-Source Voltage 1: 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient© 50 °C/W
1
7/16/99
IRF7220
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source BreakdowrNoltage -14 - - V Vss = 0V, ID = -5mA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - -0.006 - V/°C Reference to 25°C, ID = -1mA
RDSM Static Drain-to-Source On-Resistance - .0082 0.012 Vss = -4.5V, ID = -1 1A ©
- .0125 0.020 VGS = -2.5V, lo = -8.8A C)
Vcsah) Gate Threshold Voltage -0.60 - - V Vos = N/ss, ID = -250pA
gts Forward Transconductance 8.4 - - S Vros = -10V, ID = -11A
loss Drain-to-Source Leakage Current - - -5.0 pA Vros I -11.2V, VGS . 0V - o
- - -100 Vos - -11.2V, VGS - 0V, To - 70 C
less Gate-to-Source Forward Leakage - - -100 n A VGs = -12V
Gate-to-Source Reverse Leakage - - 100 Vss = 12V
% Total Gate Charge - 84 125 ID = -11A
095 Gate-to-Source Charge - 13 20 nC Vos = -10V
di Gate-to-Drain ("Miller") Charge - 37 55 N/ss = -5.0V ©
td(on) Turn-On Delay Time - 19 - Vroro = -10V
t, Rise Time - 420 - ns ID = -11A
tam) Turn-Off Delay Time - 140 - Rs = 6.29
tf Fall Time - 1040 - RD = 0.919 C)
Ciss Input Capacitance - 8075 - Ves = 0V
Coss Output Capacitance - 4400 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 4150 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - -88 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.5A, Vss = 0V ©
trr Reverse Recovery Time - 160 240 ns To = 25°C, IF = -2.5A
Qrr Reverse RecoveryCharge - 147 220 nC di/dt = 100A/ps ©
Notes:
© Repetitive rating; pulse width limited by
max. junction temperature.
© When mounted on 1 inch square copper board, t<10 sec
© Starting To = 25°C, L = 1.8mH
© Pulse width S 300ps; duty cycle f 2%.
Rs = 259, IAs= 11A. (See Figure 10)
