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IRF7220TRPBFIRN/a1660avai-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
IRF7220TRPBFIORN/a32000avai-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package


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IRF7220TRPBF
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
:raRIectifier
PD - 95172
IRF7220PbF
HEXFET® Power MOSFET
0 Ultra Low On-Resistance
o P-Channel MOSFET s BI In, D
0 Surface Mount gm: H 7 D VDSS = -141/
0 Available in Tape & Reel tf SE
q Lead-Free S E 333 D
G BI 533: D RDs(on) = 0.0129
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase, SO-8
infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
l/rss Drain- Source Voltage -14 V
ID @ TA = 25°C Continuous Drain Current, Vas @ -4.5V tll
ID @ TA-- 70°C Continuous Drain Current, Vas @ -4.5V 18.8 A
IDM Pulsed Drain Current (D t88
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
EAS Single Pulse Avalanche Energy© 110 mJ
VGS Gate-to-Source Voltage 1 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 50 °C/W
1

1 0/6/04
IRF7220PbF International
TOR Rectifier
Electrical Characteristics © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -14 - - V Vas = 0V, ID = -5mA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.006 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - .0082 0.012 Q Vas = M.5V, ID = -11A ©
- .0125 0.020 Vas = -2.5V, lo = -8.8A ©
Vegan) Gate Threshold Voltage -0.60 - - V Vos = Vas, ID = -250pA
gfs Forward Transconductance 8.4 - - S VDS = -10V, ID = -11A
loss Drain-to-Source Leakage Current - - -5.0 pA l/ns = -11.2V, Vss = 0V 0
- - -100 l/rss = -11.2V, Vas = 0V, T., = 70 C
less Gate-to-Source Forward Leakage - - -100 n A Vas = -12V
Gate-to-Source Reverse Leakage - - 100 Vas = 12V
Qg Total Gate Charge - 84 125 ID = -11A
Qgs Gate-to-Source Charge - 13 20 nC Vos = -10V
di Gate-to-Drain ("Miller") Charge - 37 55 Vas = -5.0V ©
td(on) Turn-On Delay Time - 19 - VDD = -10V
tr Rise Time -- 420 -- ns ID = -11A
td(off) Turn-Off Delay Time - 140 - Rs = 6.29
if Fall Time - 1040 - RD = 0.919 ©
Ciss Input Capacitance - 8075 - Vas = 0V
Coss Output Capacitance - 4400 - pF VDS = -10V
Crss Reverse Transfer Capacitance - 4150 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -2.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) OD - - -88 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V TJ = 25°C, Is = -2.5A, VGS = 0V ©
trr Reverse Recovery Time - 160 240 ns Tu = 25°C, IF = -2.5A
G, Reverse RecoveryCharge -- 147 220 nC di/dt = 1OOA/us ©
Notes:
C) Repetitive rating; pulse width limited by © When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
. . 0 © Starting To = 25°C, L = 1.8mH
© Pulse width S 300ps; duty cycle S 2 Yo. Re = 25Q, has = 11A. (See Figure 10)
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