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IRF7240TRPBF
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International PD-95253
a::aRIectifier IRF7240PbF
HEXFET© Power MOSFET
q Ultra Low On-Resistance Voss RDS(on) max Ir,
. g‘ffham'a' MCSFET MOV 0.015@Vss = -10V -10.5A
o u ace oun
. . 0.025 V = -4.5V -8.4A
0 Available In Tape & Reel @ GS
0 Lead-Free
Description SD31 - a D
These P-Channel MOSFETs from International 2 7:”:
Rectifier utilize advanced processing techniques to 3533 _ IIE D
achieve the extremely low on-resistance per silicon s D113 l 6 D
area. This beneht provides the designer with an CIE]
extremely efficient device for use in battery and load G 3334 5 D
management applications.. LIL
. SO-8
The SO-8 has been modified through a customized Top View
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. l/WMF improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -40 V
ID @ TA = 25''C Continuous Drain Current, Ves @ -10V -10.5
ID @ TA-- 70°C Continuous Drain Current, VGS @ -10V -8.6 A
IDM Pulsed Drain Current (D -43
Po @TA = 25°C Power Dissipation © 2.5 W
Po @TA = 70''C Power Dissipation© 1.6
Linear Derating Factor 20 mW/°C
Vss Gate-to-Source Voltage * 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ROJA Maximum Junction-to-AmbientCB) 50 ''C/W
1
06/06/05
IRF7240PbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 - - V VGS = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - -0.025 - V/°C Reference to 25''C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.015 Q Was = -10V, ID = -10.5A ©
- - 0.025 VGS = -4.5V, ID = -8.4A ©
Vegan) Gate Threshold Voltage -1.0 - -3.0 V Vos = l/cs, ID = -250pA
gfs Forward Transconductance 17 - - S Vos = -10V, ID = -10.5A
loss Drain-to-Source Leakage Current - - -15 pA Vros = -32V, VGS = 0V
- - -25 Ws = -32V, Vss = 0V, To = 70°C
I Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
GSS Gate-to-Source Reverse Leakage - - 100 VGs = 20V
% Total Gate Charge - 73 110 ID = -10.5A
Qgs Gate-to-Source Charge - 31 47 nC Vos = -20V
di Gate-to-Drain ("Miller") Charge - 17 26 l/ss = -10V
tdmn) Turn-On Delay Time - 52 - VDD = -20V ©
tr Rise Time - 490 - ns ID = -1.0A
tam) Turn-Off Delay Time - 210 - Rs = 6.09
tt Fall Time - 97 - I/ss = -10V
Ciss Input Capacitance - 9250 - VGS = OV
Cass Output Capacitance - 580 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 520 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current 43 integral reverse G
(Body Diode) (D - - p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -2.5A, N/ss = 0V ©
tn Reverse Recovery Time - 43 65 ns To = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge - 75 110 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by co Surface mounted on 1 in square Cu board, ts: 5sec.
max. junction temperature.
© Pulse width S 400ps; duty cycle s 2%.
2
