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IRF730STMN/a10000avai5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET


IRF730 ,5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFETIRF730N-CHANNEL 400V - 0.75Ω - 5.5A TO-220PowerMESH™II MOSFETTYPE V R IDSS DS(on) DIRF730 400 V < 1 ..
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IRF730
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
1/8March 2001
IRF730

N-CHANNEL 400V - 0.75Ω - 5.5A TO-220
PowerMESH™II MOSFET
(1)ISD ≤5.5A, di/dt ≤90A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TYPICAL RDS(on) = 0.75Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE
DESCRIPTION

The PowerMESH™II is the evolution of the first gen-
eration of MESH OVERLAY™. The layout refine-
ments introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS

(�) Pulse width limited by safe operating area
IRF730
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF (1)
DYNAMIC
3/8
IRF730
ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedence
IRF730
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance Static Drain-source On Resistance
Output Characteristics Transfer Characteristics
5/8
IRF730
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
IRF730
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For

Resistive Load
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