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IRF7304IORN/a940avai-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
IRF7304TRIRN/a2900avai-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package


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IRF7304-IRF7304TR
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
HEXFET® Power MOSFET
Description
Fifth Generation HEXFETs from International Rectiher utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
Generation V Technology
Ultra Low On-Resistance 1
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel S _
Dynamic dv/dt Rating
Fast Switching
PD - 9.1240C
IRF7304
SI-LL'-
(31-rr2
G2 -LL4
Top View
a_L|_|D1
VDSS = -20V
1--ITTO1
L-n-Hoe
5_L|_i D2 RDS(on) = 0.0909
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. l/Wh these improvements, multiple devices can be used in an 80-8
application with dramatically reduced board space. The package is designed for
vapor phase, infra red, orwave soldering techniques. Powerdissipation ofgreater
than 0.8W is possible in a typical PCB mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, I/ss @ -4.5V -4.7
In @ TA = 25°C Continuous Drain Current, VGs @ -4.51/ M.3
ID @ TA = 70°C Continuous Drain Current, N/ss @ -4.5V -3.4 A
IDM Pulsed Drain Current C) -17
Pro @TA = 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 Wl°C
Ves Gate-to-Source Voltage :12 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ,T3TG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
RNA Maximum Junction-to-Ambient) - 62.5 "CM/
8/25/97

IRF7304 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGs = 0V, ID = -250pA
AV. . . - - 0.090 VGS = -4.5V, ID = -2.2A ©
R D - -R Q
DS(ON) Static ran to-Source On esistance _ _ 0.140 VGS = - 2.7V, ID = -1 .8 A ©
VGS(th) Gate Threshold Voltage -0.70 - - V VDs = VGs, ID = -250pA
gfs Forward Transconductance 4.0 - - S Vros = -16V, ID = -2.2A
. - - -1.0 Vros = -16V, VGS = 0V
loss Drain to Source Leakage Current - - -25 p Vos = -16V, VGS = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - -100 nA VGS = -121/
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
q, Total Gate Charge - - 22 ID = -2.2A
Qgs Gate-to-Source Charge - - 3.3 nC Vros = -16V
di Gate-to-Drain ("Miller") Charge - - 9.0 VGs = -4.5V, See Fig. 6 and 12 ©
td(on) Turn-On Delay Time - 8.4 - VDD = -10V
tr RiseTime - 26 - ns ID = -2.2A
tdm) Turn-Off Delay Time - 51 - Rs = 6.09
tf FaIITime - 33 - RD = 4.50,See Fig. 10 ©
k Internal Drain Inductance - 4.0 - .
nH Between lead tip Q: )
d t f di t t G
Ls Internal Source Inductance - 6.0 - an cen er 0 le con ac
Ciss Input Capacitance - 610 - VGS = 0V
Coss Output Capacitance - 310 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 170 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - -2 5 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - -17 p-n junction diode. s
VSD Diode FonNard Voltage - - -1.0 V T: = 25''C, Is = -1.8A, N/ss = 0V ©
trr Reverse Recovery Time - 56 84 ns TJ = 25°C, IF = -2.2A
Qrr Reverse RecoveryCharge - 71 110 HO di/dt = 100A/ps Cl)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by © Pulse width 3 300ps; duty cycle 3 2%.
max. junction temperature. ( See fog. 11 )
© Iso s -2.2A, di/dt S- 50Alus, Vroro : V(BRpss.
T J C 150°C

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