IRF7306QTRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
IRF7306QTRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
IRF7306TR ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1241CIRF7306®HEXFET Power MOSFETl Generation V Technology1 8l Ultra Low On-ResistanceS1 D1V ..
IRF7306TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
IRF7307 ,20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 packagePD - 9.1242BIRF7307®HEXFET Power MOSFETl Generation V TechnologyN -C HAN NEL M O SF ET1 8l Ultra Lo ..
IRF7307PBF , HEXFET POWER MOSFET
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IRF7306Q-IRF7306QTRPBF
-30V Dual P-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
END OF LIFE PD - 961058
International IRF7306QPbF
TOR lectifier HEXFET© Power MOSFET
. Advanced Process Technology 1 a
. Ultra LowOn-Resistance 81E l E DI VDSS = -30V
. Dual P Channel MOSFET G1 E112 7-IrE D1
. iurffct: IVI‘OuTm & R I S2 DIS 1 GE D2
. vala em ape ee 4 a 5 -
. 150°C OperatingTemperature G2 CE 333 D2 RDS(on) - 0109
. Lead-Free .
Top View
Description
These HEXFETO Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additionalfeatures oftheseHEXFET PowerMOSFET's
are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche
rating. These benefits combineto makethis design an
extremely efficientand reliable device for use in awide
variety ofapplications.
The ethcient SO-8 package provides enhanced thermal
characteristics and dual MOSFETdie capability making
it ideal in a variety of power applications. This dual,
surface mount SO-8 can dramatically reduce board
space and is also available in Tape & Reel.
Package Standard Pack
Base part number Orderable part number EOL Notice Replacement Part Number
Type Form Quantity
IRF7306QTRPbF SO-8 T ,
IRF7306QPbF ape and Reel 4000 EOL 529 Please search the EOL gen number on le
IRF7306QPbF SO-8 Tube 95 EOL 527 WeQSLif1L91lLMt1Qe b It f r id C
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGs @ -10V -4.0
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.6 A
ID © TA = 70''C Continuous Drain Current, VGS @ -10V -2.9
IDM Pulsed Drain Current CO -14
Pro @TA= 25''C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
Ves Gate-to-Source Voltage I20 V
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TOSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance Ratings
Parameter Typ. Max. Units
Rem Maximum Junction-to-Ambient) - 62.5 "CM/
1
07/02/14
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EN D OF LIFE
IRF7306QPbF International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRmss Drain-to-Source Breakdown Voltage -30 - - V Vcs = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - -0.037 - V/°C Reference to 25°C, ID = -1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.10 Q Vcs = -10V, ID = -1.8A ©
- - 0.16 VGs = -4.5V, ID = -1.5A ©
VGS(th) Gate Threshold Voltage -1.0 - - V Vos = VGs, ID = -250pA
9tis Forward Transconductance 2.5 - - S Vos = -24V, ID = -1.8A
. - - -1.0 VDS = -24V, VGS = 0V
I Drain-to-Source Leaka e Current A
DSS g - - -25 p VDS = -24V, Vcs = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - -100 n A Veg = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - - 25 ID = -1.8A
Qgs Gate-to-Source Charge - - 2.9 nC Vos = -24V
di Gate-to-Drain ("Miller") Charge - - 9.0 Vss = -10V, See Fig. 6 and 12 ©
td(on) Turn-On Delay Time - 11 - VDD = -15V
tr Rise Time - 17 - ns ID = -1.8A
td(off) Turn-Off Delay Time - 25 - RC; = 6.052
tt FaIITime - 18 - RD = 8.29, See Fig. 10 ©
LD Internal Drain Inductance - 4.0 - . _
nH Between lead tip _)
and center of die contact G
Ls Internal Source Inductance - 6.0 -
Clss Input Capacitance - 440 - Vcs = 0V
Cass Output Capacitance - 200 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 93 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 2 5 MOSFETsymboI D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - -14 p-n junction diode. s
VSD Diode Forward Voltage - - -1.0 V Tu = 25''C, Is = -1.8A, VGS = 0V ©
trr Reverse Recovery Time - 53 80 ns Tu = 25°C, IF = -1.8A
Qrr Reverse RecoveryCharge - 66 99 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle 3 2%.
max. junction temperature. ( See fig. 11 )
© la, f -1.8A, di/dt s 90A/ps, VDD g V(BR)oss, © Surface mounted on FR-4 board, t s 10sec.
T J s150°C
2
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